Vishay Siliconix
DG308B, DG309B
Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
www.vishay.com
1
Improved Quad CMOS Analog Switches
FEATURES
± 22 V supply voltage rating
CMOS compatible logic
Low on-resistance - R
DS(on)
: 45
Low leakage - I
D(on)
: 20 pA
Single supply operation possible
Extended temperature range
Fast switching - t
ON
: < 200 ns
Low glitching - Q: 1 pC
BENEFITS
Wide analog signal range
Simple logic interface
Higher accuracy
Minimum transients
Reduced power consumption
Superior to DG308A, DG309
Space savings (TSSOP)
APPLICATIONS
Industrial instrumentation
Test equipment
Communications systems
Disk drives
Computer peripherals
Portable instruments
Sample-and-hold circuits
DESCRIPTION
The DG308B, DG309B analog switches are highly improved
versions of the industry-standard DG308A, DG309. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. The DG308B and DG309B
can handle up to ± 22 V input signals. An epitaxial layer
prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
The DG308B is a normally open switch and the DG309B is
a normally closed switch. (see Truth Table.)
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic “0” 3.5 V
Logic “1” 11 V
* Pb containing terminations are not RoHS compliant, exemptions may apply
DG308B
IN
1
IN
2
D
1
D
2
S
1
S
2
V- V+
GND NC
S
4
S
3
D
4
D
3
IN
4
IN
3
Dual-In-Line, SOIC and TSSOP
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
TRUTH TABLE
Logic DG308B DG309B
0 OFF ON
1ONOFF
www.vishay.com
2
Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
Vishay Siliconix
DG308B, DG309B
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
ORDERING INFORMATION
Temp. Range Package Part Number
- 40 °C to 85 °C
16-Pin PlasticDIP
DG308BDJ
DG308BDJ-E3
DG309BDJ
DG309BDJ-E3
16-Pin Narrow SOIC
DG308BDY
DG308BDY-E3
DG308BDY-T1
DG308BDY-T1-E3
DG309BDY
DG309BDY-E3
DG309BDY-T1
DG309BDY-T1-E3
16-Pin TSSOP
DG308BDQ
DG308BDQ-E3
DG308BDQ-T1
DG308BDQ-T1-E3
DG309BDQ
DG309BDQ-E3
DG309BDQ-T1
DG309BDQ-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter Limit Unit
Voltages Referenced, V+ to V- 44
V
GND 25
Digital Inputs
a
, V
S
, V
D
(V-) - 2 to (V+) + 2
or
30 mA, whichever occurs first
Current, Any Terminal 30
mA
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100
Storage Temperature
(AK Suffix) - 65 to 150
°C
(DJ, DY and DQ Suffix) - 65 to 125
Power Dissipation (Package)
b
16-Pin Plastic DIP
c
470
mW16-Pin Narrow SOIC and TSSOP
d
640
16-Pin CerDIP
e
900
Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
www.vishay.com
3
Vishay Siliconix
DG308B, DG309B
SPECIFICATIONS
a
Parameter Symbol
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
V
IN
= 11 V, 3.5 V
f
Temp.
b
Typ.
c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full - 15 15 - 15 15 V
Drain-Source
On-Resistance
R
DS(on)
V
D
= ± 10 V, I
S
= 1 mA
Room
Full
45 85
100
85
100
R
DS(on)
Match R
DS(on)
Room 2 %
Source Off Leakage Current I
S(off)
V
S
= ± 14 V, V
D
= ± 14 V
Room
Full
± 0.01 - 0.5
- 20
0.5
20
- 0.5
- 5
0.5
5
nADrain Off Leakage Current I
D(off)
V
D
= ± 14 V, V
S
= ± 14 V
Room
Full
± 0.01 - 0.5
- 20
0.5
20
- 0.5
- 5
0.5
5
Drain On Leakage Current I
D(on)
V
S
= V
D
= ± 14 V
Room
Full
± 0.02 - 0.5
- 40
0.5
40
- 0.5
- 10
0.5
10
Digital Control
Input, Voltage High V
INH
Full 11 11
V
Input, Voltage Low V
INL
Full 3.5 3.5
Input Current I
INH
or I
INL
V
INH
or V
INL
Full - 11- 11µA
Input Capacitance C
IN
Room 5 pF
Dynamic Characteristics
Tu r n - On T im e t
ON
V
S
= 3 V, see figure 2
Room 200 200
ns
Turn-Off Time t
OFF
Room 150 150
Charge Injection Q C
L
= 1000 pF, V
g
= 0 V, R
g
= 0 Room 1 pC
Source-Off Capacitance C
S(off)
V
S
= 0 V, f = 1 MHz,
Room 5
pFDrain-Off Capacitance C
D(off)
Room 5
Channel-On Capacitance C
D(on)
V
D
= V
S
= 0 V, f = 1 MHz Room 16
Off-Isolation OIRR
C
L
= 15 pF, R
L
= 50 
V
S
= 1 V
RMS
, f = 100 kHz
Room 90
dB
Channel-to-Channel
Crosstalk
X
TA LK
Room 95
Power Supply
Positive Supply Current I+
V
IN
= 0 V or 15 V
Room
Full
1
5
1
5
µA
Negative Supply Current I-
Room
Full
- 1
- 5
- 1
- 5
Power Supply Range for
Continuous Operation
V
OP
Full ± 4 ± 22 ± 4 ± 22 V

DG308BDQ-T1-E3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs QUAD SPST ANALOG SWITCH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union