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Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
Vishay Siliconix
DG308B, DG309B
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
(for Single Supply)
Parameter Symbol
Test Conditions
Unless Specified
V+ = 12 V, V- = 0 V
V
IN
= 11 V, 3.5 V
f
Temp.
b
Typ.
c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full 0 12 0 12 V
Drain-Source
On-Resistance
R
DS(on)
V
D
= 3 V, 8 V, I
S
= 1 mA
Room
Full
90 160
200
160
200
Dynamic Characteristics
Tur n - O n T i m e t
ON
V
S
= 8 V, see figure 2
Room 300 300
ns
Turn-Off Time t
OFF
Room 200 200
Charge Injection Q C
L
= 1 nF, V
gen
= 6 V, R
gen
= 0 Room 4 pC
Power Supply
Positive Supply Current I+
V
IN
= 0 V or 12 V
Room
Full
1
5
1
5
µA
Negative Supply Current I-
Room
Full
- 1
- 5
- 1
- 5
Power Supply Range for
Continuous Operation
V
OP
Full 4 44 4 44 V
Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
www.vishay.com
5
Vishay Siliconix
DG308B, DG309B
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
R
DS(on)
vs. V
D
and Power Supply Voltages
R
DS(on)
vs. V
D
and Single Power Supply Voltages
Leakage Currents vs. Temperature
- 20 - 16 - 12 - 8 - 4 0 4 8 12 16 20
40
50
60
70
80
90
100
110
± 5 V
V
D
- Drain Voltage (V)
± 10 V
± 15 V
± 20 V
30
20
10
R
DS(on)
- Drain-Source On-Resistance ()
0246810121416
0
25
50
75
100
125
150
175
200
225
V
D
- Drain Voltage (V)
250
V+ = 5 V
7 V
10 V
12 V
15 V
R
DS(on)
- Drain-Source On-Resistance ()
- 55 25 45 5 - 15 65 - 35 85 105 125
V+ = 15 V
V- = - 15 V
V
S,
V
D
= ± 14 V
I
S( of f)
, I
D(of f)
1 nA
10 pA
1 pA
Temperature (°C)
I
S,
I
D
- Current
100 pA
R
DS(on)
vs. V
D
and Temperature
Leakage Currents vs. Analog Voltage
Q
S
, Q
D
- Charge Injection vs. Analog Voltage
0
10
20
30
40
50
- 15 - 10 - 5 0 5 10 15
V
D
- Drain Voltage (V)
125 °C
85 °C
25 °C
- 55 °C
V+ = 15 V
V- = - 15 V
60
70
80
90
100
R
DS(on)
- Drain-Source On-Resistance ()
I
D(on)
- 20 - 15 - 10 - 5 0 5 10 15 20
Analog Voltage
I
S,
I
D
- Current (pA)
40
30
20
10
0
- 10
- 20
- 30
- 40
I
S( of f)
, I
D(of f)
V+ = 22 V
V- = - 22 V
T
A
= 25 °C
- 15 - 10 - 5 0 5 10 15
30
20
10
0
- 10
- 20
- 30
V+ = 15 V
V- = - 15 V
V+ = 12 V
V- = 0 V
Analog V oltage (V)
Q - Charge (pC)
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Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
Vishay Siliconix
DG308B, DG309B
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SCHEMATIC DIAGRAM (Typical Channel)
Off Isolation vs. Frequency
10 k 100 k 1 M 10 M
40
50
60
70
80
90
100
11 0
120
f - Frequency (Hz)
OIRR (dB)
V+ = 15 V
V- = - 15 V
R
L
= 50
Figure 1.
D
X
S
X
V+
IN
X
V–
Level
Shift/
GND
V+
V-
Drive

DG308BDQ-T1-E3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs QUAD SPST ANALOG SWITCH
Lifecycle:
New from this manufacturer.
Delivery:
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