NXP Semiconductors
PMXB65ENE
30 V, N-channel Trench MOSFET
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NXP Semiconductors N.V. 2016. All rights reserved
Product data sheet 3 November 2016 3 / 15
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage - 30 V
V
GS
gate-source voltage
T
j
= 25 °C
-20 20 V
V
GS
= 10 V; T
amb
= 25 °C
[1]
- 3.2 AI
D
drain current
V
GS
= 10 V; T
amb
= 100 °C
[1]
- 2.5 A
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - 12.8 A
[2]
- 0.4 WT
amb
= 25 °C
[1]
- 1.07 W
P
tot
total power dissipation
T
sp
= 25 °C - 8.33 W
T
j
junction temperature -55 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
Source-drain diode
I
S
source current T
amb
= 25 °C
[1]
- 0.9 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
T
j
(°C)
- 75 17512525 75- 25
017aaa123
40
80
120
P
der
(%)
0
Fig. 2. Normalized total power dissipation as a
function of junction temperature
T
j
(°C)
- 75 17512525 75- 25
017aaa124
40
80
120
I
der
(%)
0
Fig. 3. Normalized continuous drain current as a
function of junction temperature
