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PMXB65ENEZ

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NXP Semiconductors
PMXB65ENE
30 V, N-channel Trench MOSFET
PMXB65ENE All information provided in this document is subject to legal disclaimers.
©
NXP Semiconductors N.V. 2016. All rights reserved
Product data sheet 3 November 2016 6 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C 30 - - V
V
GSth
gate-source threshold
voltage
I
D
= 250 µA; V
DS
=V
GS
; T
j
= 25 °C 1 1.4 2 V
I
DSS
drain leakage current V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C - - 1 µA
V
GS
= 16 V; V
DS
= 0 V; T
j
= 25 °C - - 10 µA
V
GS
= -16 V; V
DS
= 0 V; T
j
= 25 °C - - -10 µA
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C - - 1 µA
I
GSS
gate leakage current
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C - - -1 µA
V
GS
= 10 V; I
D
= 3.2 A; T
j
= 25 °C - 44 67 mΩ
V
GS
= 10 V; I
D
= 3.2 A; T
j
= 150 °C - 71 107 mΩ
R
DSon
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 2.9 A - 56 79 mΩ
g
fs
forward
transconductance
V
DS
= 10 V; I
D
= 3.2 A; T
j
= 25 °C - 26 - S
R
G
gate resistance f = 1 MHz - 1 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge - 6 11 nC
Q
GS
gate-source charge - 0.7 - nC
Q
GD
gate-drain charge
V
DS
= 15 V; I
D
= 3.2 A; V
GS
= 10 V;
T
j
= 25 °C
- 0.9 - nC
C
iss
input capacitance - 295 - pF
C
oss
output capacitance - 40 - pF
C
rss
reverse transfer
capacitance
V
DS
= 15 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 31 - pF
t
d(on)
turn-on delay time - 3 - ns
t
r
rise time - 12 - ns
t
d(off)
turn-off delay time - 11 - ns
t
f
fall time
V
DS
= 15 V; I
D
= 3.2 A; V
GS
= 10 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
- 3 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= 0.9 A; V
GS
= 0 V; T
j
= 25 °C - 0.8 1.2 V
NXP Semiconductors
PMXB65ENE
30 V, N-channel Trench MOSFET
PMXB65ENE All information provided in this document is subject to legal disclaimers.
©
NXP Semiconductors N.V. 2016. All rights reserved
Product data sheet 3 November 2016 7 / 15
V
DS
(V)
0 431 2
aaa-008889
8
4
12
16
I
D
(A)
0
V
G
S
=
2
.
2
5
V
2
.
5
V
3
.
0
V
3
.
5
V
4
.
0
V
10
V
4
.
5
V
T
j
= 25 °C
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-021517
10
-4
10
-5
10
-3
I
D
(A)
10
-6
V
GS
(V)
0 2.52.01.0 1.50.5
min typ
max
T
j
= 25 °C; V
DS
= 5 V
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
I
D
(A)
0 16124 8
aaa-016523
100
150
50
200
250
R
DSon
(mΩ)
0
V
G
S
=
1
0
V
2
.
5
V
4
.
5
V
4
.
0
V
3
.
8
V
3
.
5
V
3
.
0
V
2
.
2
5
V
3
.
3
V
T
j
= 25 °C
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
V
GS
(V)
0 1084 62
aaa-008896
100
150
50
200
250
R
DSon
(mΩ)
0
T
j
=
1
5
0
°
C
T
j
=
2
5
°
C
I
D
= 3.2 A
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
NXP Semiconductors
PMXB65ENE
30 V, N-channel Trench MOSFET
PMXB65ENE All information provided in this document is subject to legal disclaimers.
©
NXP Semiconductors N.V. 2016. All rights reserved
Product data sheet 3 November 2016 8 / 15
V
GS
(V)
0 431 2
aaa-008905
4
8
12
I
D
(A)
0
T
j
=
1
5
0
°
C
T
j
=
2
5
°
C
V
DS
> I
D
× R
DSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
aaa-008897
1
0.5
1.5
2
a
0
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
-60 1801200 60
aaa-021518
1
2
3
V
GS(th)
(V)
0
min
typ
max
I
D
= 0.25 mA; V
DS
= V
GS
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
V
DS
(V)
0,1 100101
aaa-008909
10
2
10
10
3
C
(pF)
1
C
iss
C
oss
C
rss
f = 1 MHz; V
GS
= 0 V
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PMXB65ENEZ

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Description:
MOSFET 31 V, N-channel Trench MOSFET
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