FDA2712 Datasheet FDA2712 | P1-P3

tm

April 2007

FDA2712 N-Channel UltraFET Trench MOSFET

FDA2712 Rev. A

www.fairchildsemi.com1

UltraFET

FDA2712

N-Channel UltraFET Trench MOSFET

250V, 64A, 34mΩ

Features

•R

DS(on)

= 29.2mΩ @V

GS

= 10 V, I

D

= 40A

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low R

DS(on)

• High power and current handling capability

• RoHS compliant

Applications

• PDP application

Description

This N-Channel MOSFET is produced using Fairchild Semicon-

ductor’s advanced PowerTrench process that has been especial-

ly tailored to minimize the on-state resistance and yet maintain

superior switching performance.

D

G

S

GSD

TO-3PN

MOSFET Maximum Ratings

Thermal Characteristics

Symbol Parameter Ratings Units

V

DSS

Drain to Source Voltage 250 V

V

GSS

Gate to Source Voltage ±30 V

I

D

D r a i n C u r r e n t

-Continuous (T

C

= 25

o

C) 64

A

-Continuous (T

C

= 100

o

C) 44

I

DM

D r a i n C u r r e n t - P u l s e d (Note 1) 240 A

E

AS

Single Pulsed Avalanche Energy (Note 2) 245 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

D

Power Dissipation

(T

C

= 25

o

C) 357 W

- Derate above 25

o

C2.85W/

o

C

T

J

, T

STG

Operating and Storage Temperature Range -55 to +150

o

C

T

L

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

o

C

Symbol Parameter Ratings Units

R

θJC

Thermal Resistance, Junction to Case 0.35

o

C/W

R

θJA

Thermal Resistance, Junction to Ambient 40

FDA2712 N-Channel UltraFET Trench MOSFET

FDA2712 Rev. A

www.fairchildsemi.com

2

Package Marking and Ordering Information T

C

= 25

o

C unless otherwise noted

Electrical Characteristics

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking Device Package Reel Size Tape Width Quantity

FDA2712 FDA2712 TO-3PN N/A N/A 30

Symbol Parameter Test Conditions Min. Typ. Max. Units

BV

DSS

Drain to Source Breakdown Voltage I

D

= 250μA, V

GS

= 0V, T

J

= 25

o

C 250 - - V

ΔBV

DSS

/ ΔT

J

Breakdown Voltage Temperature

Coefficient

I

D

= 250μA, Referenced to 25

o

C-0.2-V/

o

C

I

DSS

Zero Gate Voltage Drain Current

V

DS

= 250V

V

GS

= 0V

--1μA

T

J

= 125

o

C - - 500 μA

I

GSS

Gate to Body Leakage Current V

GS

= ±20V, V

DS

= 0V - - ±100 nA

V

GS(th)

Gate Threshold Voltage V

GS

= V

DS

, I

D

= 250μA 3.0 3.9 5.0 V

R

DS(on)

Static Drain to Source On Resistance V

GS

= 10V, I

D

= 40A - 29.2 34 mΩ

g

FS

Forward Transconductance V

DS

= 10V, I

D

= 40A (Note 4) -43-S

C

iss

Input Capacitance

V

DS

= 25V, V

GS

= 0V

f = 1MHz

- 7650 10175 pF

C

oss

Output Capacitance - 550 735 pF

C

rss

Reverse Transfer Capacitance - 105 155 pF

Q

g

Total Gate Charge at 10V

V

DS

= 125V, I

D

= 80A

V

GS

= 10V

(Note 4, 5)

- 99 129 nC

Q

gs

Gate to Source Gate Charge - 46 - nC

Q

gd

Gate to Drain “Miller” Charge - 21 - nC

t

d(on)

Turn-On Delay Time

V

DD

= 125V, I

D

= 80A

V

GS

= 10V, R

GEN

= 25Ω

(Note 4, 5)

- 128 266 ns

t

r

Turn-On Rise Time - 371 751 ns

t

d(off)

Turn-Off Delay Time - 143 295 ns

t

f

Turn-Off Fall Time - 210 429 ns

I

S

Maximum Continuous Drain to Source Diode Forward Current - - 80 A

I

SM

Maximum Pulsed Drain to Source Diode Forward Current - - 240 A

V

SD

Drain to Source Diode Forward Voltage V

GS

= 0V, I

SD

= 80A - - 1.2 V

t

rr

Reverse Recovery Time

V

GS

= 0V, I

SD

= 80A

dI

F

/dt = 100A/μs

(Note 4)

- 175 - ns

Q

rr

Reverse Recovery Charge - 1.17 - μC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1mH, I

AS

= 22.2A, V

DD

= 50V, R

G

= 25Ω, Starting T

J

= 25°C

3. I

SD

≤ 80A, di/dt ≤ 200A/μs, V

DD

≤ BV

DSS

, Starting T

J

= 25°C

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDA2712 N-Channel UltraFET Trench MOSFET

FDA2712 Rev. A

www.fairchildsemi.com

3

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

0.1 1 10

1

10

100

* Notes :

1. 250

μs Pulse Test

2. T

C

= 25

o

C

V

GS

= 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V

I

D

,Drain Current[A]

V

DS

, Drain-Source Voltage[V]

300

46810

1

10

100

1000

-55

o

C

150

o

C

* Notes :

1. V

DS

= 20V

2. 250

μs Pulse Test

25

o

C

I

D

,Drain Current[A]

V

GS

,Gate-Source Voltage[V]

0.3 0.6 0.9 1.2 1.5

1

10

100

1000

V

GS

= 0V

150

o

C

I

S

, Reverse Drain Current [A]

V

SD

, Body Diode Forward Voltage [V]

25

o

C

0 50 100 150 200

0.02

0.04

0.06

0.08

* Note : T

J

= 25

o

C

V

GS

= 20V

V

GS

= 10V

R

DS(ON)

[Ω],

Drain-Source On-Resistance

I

D

, Drain Current [A]

0.1 1 10

0

2000

4000

6000

8000

10000

C

oss

C

iss

C

iss

= C

gs

+ C

gd

(C

ds

= shorted)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

* Note:

1. V

GS

= 0V

2. f = 1MHz

C

rss

Capacitances [pF]

V

DS

, Drain-Source Voltage [V]

30

0 20406080100120

0

2

4

6

8

10

* Note : I

D

= 80A

V

DS

= 50V

V

DS

= 125V

V

DS

= 200V

V

GS

, Gate-Source Voltage [V]

Q

g

, Total Gate Charge [nC]

FDA2712

FDA2712

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