FDA2712

FDA2712 N-Channel UltraFET Trench MOSFET
FDA2712 Rev. A
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10V
2. I
D
= 40A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
25 50 75 100 125 150
0
20
40
60
80
I
D
, Drain Current [A]
T
C
, Case Temperature [
o
C]
110100
0.01
0.1
1
10
100
1000
100μs
1ms
10ms
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
400
100ms
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-3
10
-2
10
-1
10
0
0.01
0.1
0.2
0.05
0.02
* Notes :
1. Z
θJC
(t) = 0.35
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θJC
(t)
0.5
Single pulse
Thermal Response [Z
θJC
]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
FDA2712 N-Channel UltraFET Trench MOSFET
FDA2712 Rev. A
www.fairchildsemi.com
5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDA2712 N-Channel UltraFET Trench MOSFET
FDA2712 Rev. A
www.fairchildsemi.com
6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
Sam e Type
as D U T
V
GS
dv/dt controlled by R
G
•I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( D riv e r )
I
SD
( D U T )
V
DS
( DUT )
V
DD
Body D iode
Forw ard V oltage D rop
V
SD
I
FM
, B ody D iode Forw ard C urrent
Body D iode R everse Current
I
RM
Body D iode R ecovery dv/dt
di/dt
D =
G ate Pulse W idth
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Sam e Type
as D U T
V
GS
dv/dt controlled by R
G
•I
SD
controlled by pulse period
V
DD
LL
I
SD
10V
V
GS
( D riv e r )
I
SD
( D U T )
V
DS
( DUT )
V
DD
Body D iode
Forw ard V oltage D rop
V
SD
I
FM
, B ody D iode Forw ard C urrent
Body D iode R everse Current
I
RM
Body D iode R ecovery dv/dt
di/dt
D =
G ate Pulse W idth
Gate Pulse Period
--------------------------
D =
G ate Pulse W idth
Gate Pulse Period
--------------------------

FDA2712

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 250V N-CH UltraFET PowerTrench MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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