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FDA2712
P1-P3
P4-P6
P7-P8
FDA2712 N-Channel Ultr
aFET Trench MOSFET
FDA2712 Rev. A
www.fairchildsemi.com
4
T
ypical Performance Characteristics
(Continued)
Figure 7. Breakdown
Voltage Variation
Figure
8. On-Resistance Variation
vs. Temperature
vs.
Temperature
Figure 9. Maximum S
afe Operating Area
Figure 10. Maximum Drain Current
vs. Case Tem
perature
Figure
11. Transient Thermal Response Curve
-100
-50
0
50
100
15
0
200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0V
2. I
D
= 250
μ
A
BV
DSS
, [Normalized]
Drain-Source B
reakdown Voltage
T
J
, Junction T
em
perature
[
o
C
]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10V
2. I
D
= 40A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
T
J
, Junction Temperature
[
o
C
]
25
50
75
100
125
150
0
20
40
60
80
I
D
, Drai
n Curr
ent [A]
T
C
, Case Tem
perature
[
o
C
]
11
0
1
0
0
0.01
0.1
1
10
100
1000
100
μ
s
1ms
10ms
I
D
, Drain Current
[A]
V
DS
, Drain-
Source Voltage [V]
Operation in Thi
s A
rea
is Limited by R
DS(o
n)
* Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. S
ing
le P
uls
e
400
100m
s
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-3
10
-2
10
-1
10
0
0.01
0.1
0.2
0.05
0.02
* Notes :
1. Z
θ
JC
(t) = 0.35
o
C/W Max
.
2. Duty
Facto
r, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
0.5
Single pulse
Thermal Response
[
Z
θ
JC
]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
FDA2712 N-Channel Ultr
aFET Trench MOSFET
FDA2712 Rev. A
www.fairchildsemi.com
5
Gate Charge T
est Circuit & W
aveform
Resistive Switching T
est Circuit & W
aveforms
Unclamped Inductive Switching T
est Circuit & W
aveforms
FDA2712 N-Channel Ultr
aFET Trench MOSFET
FDA2712 Rev. A
www.fairchildsemi.com
6
Peak Diode Recovery dv/d
t T
est Circuit & W
aveforms
DUT
V
DS
+
_
Dr
i
v
e
r
R
G
S
am
e T
y
pe
as
D
U
T
V
GS
•
dv
/
dt
c
ont
r
ol
l
ed by
R
G
•I
SD
c
ont
r
ol
l
ed by
pul
s
e per
i
od
V
DD
L
I
SD
10V
V
GS
( D
r
i
v
e
r
)
I
SD
( D
U
T
)
V
DS
(
DUT
)
V
DD
B
ody
D
i
od
e
F
or
w
ar
d V
ol
t
age D
r
op
V
SD
I
FM
,
B
ody
D
i
ode For
w
ar
d C
ur
r
ent
B
ody
D
i
ode R
ev
er
s
e C
ur
r
ent
I
RM
B
ody
D
i
ode R
ec
ov
er
y
dv
/
dt
di
/
dt
D =
G
at
e P
ul
s
e
W
i
dt
h
G
a
t
e
Pu
l
s
e
Pe
r
i
o
d
----------------------
----
DUT
V
DS
+
_
Dr
i
v
e
r
R
G
S
am
e T
y
pe
as
D
U
T
V
GS
•
dv
/
dt
c
ont
r
ol
l
ed by
R
G
•I
SD
c
ont
r
ol
l
ed by
pul
s
e per
i
od
V
DD
L
L
I
SD
10V
V
GS
( D
r
i
v
e
r
)
I
SD
( D
U
T
)
V
DS
(
DUT
)
V
DD
B
ody
D
i
ode
F
or
w
ar
d V
ol
t
age D
r
op
V
SD
I
FM
,
B
ody
D
i
ode For
w
ar
d C
ur
r
ent
B
ody
D
i
ode R
ev
er
s
e C
ur
r
ent
I
RM
B
ody
D
i
ode R
ec
ov
er
y
dv
/
dt
di
/
dt
D =
G
at
e P
ul
s
e
W
i
dt
h
G
a
t
e
Pu
l
s
e
Pe
r
i
o
d
----------------------
----
D =
G
at
e P
ul
s
e
W
i
dt
h
G
a
t
e
Pu
l
s
e
Pe
r
i
o
d
----------------------
----
P1-P3
P4-P6
P7-P8
FDA2712
Mfr. #:
Buy FDA2712
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 250V N-CH UltraFET PowerTrench MOSFET
Lifecycle:
New from this manufacturer.
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FDA2712