U430/431
Vishay Siliconix
Document Number: 70249
S-04031—Rev. E, 04-Jun-01
www.vishay.com
8-5
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
1 10 100
100
80
40
20
0
60
V
GS(off)
= –1.5 V
T
A
= 25_C
–3 V
On-Resistance vs. Drain Current
I
D
– Drain Current (mA)
1100.1
100
80
40
20
0
60
I
D
– Drain Current (mA)
A
V
+
g
fs
R
L
1 ) R
L
g
os
R
L
+
10 V
I
D
Assume V
DD
= 15 V, V
DS
= 5 V
V
GS(off)
= –1.5 V
–3 V
Circuit Voltage Gain vs. Drain Current
15
0 –12 –16 –20–4
12
6
3
0
9
–8
Common-Source Input Capacitance
vs. Gate-Source Voltage
V
DS
= 0 V
f = 1 MHz
5 V
V
GS
– Gate-Source Voltage (V)
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
10
0 –12 –20–16–4
8
4
2
0
6
–8
V
DS
= 0 V
f = 1 MHz
5 V
V
GS
– Gate-Source Voltage (V)
– Reverse Feedback Capacitance (pF)C
rss
100
10
1
0.1
100 1000
(mS)
V
DG
= 10 V
I
D
= 10 mA
Common–Gate
g
ig
b
ig
Input Admittance vs. Frequency
f – Frequency (MHz)
100
10
1
0.1
100 1000
(mS)
V
DG
= 10 V
I
D
= 10 mA
Common–Gate
–g
fg
b
fg
Forward Admittance vs. Frequency
f – Frequency (MHz)
200 500
200 500
– Input Capacitance (pF)C
iss
r
DS(on)
– Drain-Source On-Resistance ( Ω )
A
V
– Voltage Gain
