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SI5479DU-T1-GE3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 73368
S-81448-Rev. B, 23-Jun-08
Vishay Siliconix
Si5479DU
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.4
1
10
20
0.0 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
-Source-to-Drain Voltage (V)
-Source Current (A)I
S
1.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
GS(th)
(V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.02
0.04
0.06
0.08
0.10
012345
I
D
= 6.9 A
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- Drain-to-Source On-Resistance (mΩ)
T
A
= 25 °C
T
A
= 125 °C
0
30
40
10
20
Power (W)
Time (s)
00610.10.010.001 10 100
Safe Operating Area, Junction-to-Ambient
100
1
00111.0
0.01
10
- Drain Current (A)
I
D
0.1
1 ms
10 ms
100 ms
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1 s
10 s
Limited by R
DS(on)
*
10
T
A
= 25 °C
Single Pulse
Document Number: 73368
S-81448-Rev. B, 23-Jun-08
www.vishay.com
5
Vishay Siliconix
Si5479DU
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
5
10
15
20
25
30
0 25 50 75 100 125 150
Package Limited
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Power Derating
0
4
8
12
16
20
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
www.vishay.com
6
Document Number: 73368
S-81448-Rev. B, 23-Jun-08
Vishay Siliconix
Si5479DU
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73368.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
00601110
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 75 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Single Pulse
P1-P3P4-P6P7-P7

SI5479DU-T1-GE3

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Buy SI5479DU-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET P-CH 12V 16A CHIPFET
Lifecycle:
New from this manufacturer.
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