IXGT2N250 Datasheet IXGH2N250, IXGT2N250 | P1-P3

Symbol Test Conditions Maximum Ratings

V

CES

T

C

= 25°C to 150°C 2500 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1MΩ 2500 V

V

GES

Continuous ± 20 V

V

GEM

Transient ± 30 V

I

C25

T

C

= 25°C 5.5 A

I

C110

T

C

= 110°C 2.0 A

I

CM

T

C

= 25°C, 1ms 13.5 A

SSOA V

GE

= 15V, T

VJ

= 125°C, R

G

= 50Ω I

CM

= 6 A

(RBSOA) Clamped Inductive Load V

CE

≤ 2000 V

P

C

T

C

= 25°C 32 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10 seconds 260 °C

M

d

Mounting Torque (TO-247) 1.13/10 Nm/lb.in.

Weight TO-247 6 g

TO-268 4 g

DS100162(06/09)

IXGH2N250

IXGT2N250

V

CES

= 2500V

I

C110

= 2A

V

CE(sat)

≤≤

≤ 3.1V

High Voltage IGBTs

for Capacitor Discharge

Applications

G = Gate C = Collector

E = Emitter TAB = Collector

TO-268 (IXGT)

G

E

C (TAB)

TO-247 (IXGH)

G

C

E

C (TAB)

Features

z

Optimized for Low Conduction and

Switching Losses

z

International Standard Packages

Advantages

z

High Power Density

z

Low Gate Drive Requirement

Applications

z

Switched-Mode and Resonant-Mode

Power Supplies

z

Uninterruptible Power Supplies (UPS)

z

Capacitor Discharge Circuits

Advance Technical Information

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 2500 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

3.0 5.5 V

I

CES

V

CE

= 0.8 • V

CES

, V

GE

= 0V 10 μA

T

J

= 125°C 100 μA

I

GES

V

CE

= 0V, V

GE

= ± 20V ±100 nA

V

CE(sat)

I

C

= I

C110

, V

GE

= 15V, Note 1 2.6 3.1 V

T

J

= 125°C 3.1 V

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXGH2N250

IXGT2N250

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

e

∅ P

TO-247 (IXGH) Outline

1 2 3

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

TO-268 (IXGT) Outline

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= I

C110

, V

CE

= 10V, Note 1 0.7 1.2 S

C

ies

144 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 8.7 pF

C

res

3.2 pF

Q

g

10.5 nC

Q

ge

I

C

= I

C110

, V

GE

= 15V, V

CE

= 1000V 6.4 nC

Q

gc

1.0 nC

t

d(on)

22 ns

t

r

74 ns

t

d(off)

70 ns

t

f

100 ns

t

d(on)

26 ns

t

r

89 ns

t

d(off)

74 ns

t

f

204 ns

R

thJC

3.9 °C/W

R

thCK

(TO-247) 0.21 °C/W

Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Resistive Switching times, T

J

= 25°C

I

C

= I

C110

, V

GE

= 15V

V

CE

= 1800V, R

G

= 50Ω

Resistive Switching times, T

J

= 125°C

I

C

= I

C110

, V

GE

= 15V

V

CE

= 1800V, R

G

= 50Ω

Fig. 1. Output Characteristics

@ 25ºC

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

20V

15V

10V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

4

8

12

16

20

24

28

0 2 4 6 8 10 12 14 16 18 20

V

CE

- Volts

I

C

-

Amperes

V

GE

= 25V

15V

10V

20V

Fig. 3. Output Characteristics

@ 125ºC

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

20V

15V

10V

5V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 4A

I

C

= 2A

I

C

= 1A

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 4A

T

J

= 25ºC

2A

1A

Fig. 6. Input Admittance

0

1

2

3

4

5

6

7

8

3456789101112

V

GE

- Volts

I

C

-

Amperes

T

J

= - 40ºC

25ºC

125ºC

IXGH2N250

IXGT2N250

IXYS REF: G_2N250(2P)6-17-09

IXGT2N250

IXGT2N250

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