© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_2N250(2P)6-17-09
IXGH2N250
IXGT2N250
Fig. 13. Resistive Turn-on Rise Time
vs. Collector Current
20
40
60
80
100
120
140
160
180
200
1.01.52.02.53.03.54.0
I
C
- Amperes
t
r
- Nanoseconds
R
G
= 50Ω
V
GE
= 15V
V
CE
= 1800V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Resistive Turn-on Switching Times
vs. Gate Resistance
60
80
100
120
140
160
180
200
220
240
260
280
50 75 100 125 150 175 200 225 250 275 300
R
G
- Ohms
t
r
- Nanoseconds
14
18
22
26
30
34
38
42
46
50
54
58
t
d(on)
- Nanoseconds
t
r
t
d(on
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1800V
I
C
= 4A, 2A
Fig. 15. Resistive Turn-off Switching Times
vs. Junction Temperature
0
50
100
150
200
250
300
350
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
55
60
65
70
75
80
85
90
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 50Ω, V
GE
= 15V
V
CE
= 1800V
I
C
= 2A
I
C
= 4A
Fig. 16. Resistive Turn-off Switching Times
vs. Collector Current
10
100
1,000
10,000
1.0 1.5 2.0 2.5 3.0 3.5 4.0
I
C
- Amperes
t
f
- Nanoseconds
60
70
80
90
t
d(off)
- Nanoseconds
t
f
t
d(off
)
- - - -
R
G
= 50Ω, V
GE
= 15V
V
CE
= 1800V
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. Resistive Turn-on Rise Time
vs. Junction Temperature
20
40
60
80
100
120
140
160
180
200
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 50Ω
V
GE
= 15V
V
CE
= 1800V
I
C
= 2A
I
C
= 4A
Fig. 17. Resistive Turn-off Switching Times
vs. Gate Resistance
0
50
100
150
200
250
300
350
400
450
500
50 75 100 125 150 175 200 225 250 275 300
R
G
- Ohms
t
f
- Nanoseconds
20
40
60
80
100
120
140
160
180
200
220
t
d(off)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1800V
I
C
= 4A
I
C
= 2A
