BYV25FX-600 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 7 March 2011 2 of 11
NXP Semiconductors
BYV25FX-600
Enhanced ultrafast power diode
2. Pinning information
3. Ordering information
4. Limiting values
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
SOD113 (TO-220F)
2 A anode
mb n.c. mounting base; isolated
Table 3. Ordering information
Type number Package
Name Description Version
BYV25FX-600 TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 2-lead TO-220 "full pack"
SOD113
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse voltage - 600 V
V
RWM
crest working reverse voltage - 600 V
V
R
reverse voltage DC - 600 V
I
F(AV)
average forward current square-wave pulse; δ = 0.5 ;
T
h
≤ 97 °C;
see Figure 1
; see Figure 2
-5A
I
FRM
repetitive peak forward current square-wave pulse; δ =0.5; t
p
= 25 µs;
T
h
≤ 97 °C
-10A
I
FSM
non-repetitive peak forward
current
t
p
= 10 ms; sine-wave pulse;
T
j(init)
= 25 °C; see Figure 3
-60A
t
p
= 8.3 ms; sine-wave pulse;
T
j(init)
= 25 °C; see Figure 3
-66A
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C