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BYV25FX-600,127

P1-P3P4-P6P7-P9P10-P12
BYV25FX-600 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 7 March 2011 3 of 11
NXP Semiconductors
BYV25FX-600
Enhanced ultrafast power diode
V
o
= 1.499 V; R
s
= 0.041 Ω
V
o
= 1.499 V; R
s
= 0.041 Ω
Fig 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig 3. Non-repetitive peak forward current as a function of pulse width; square waveform; maximum values
I
F(AV)
(A)
08624
003aaf430
8
10
6
4
2
12
14
P
tot
(W)
0
δ
= 1
0.5
0.2
0.1
I
F(AV)
(A)
054231
003aaf431
4
6
2
8
10
P
tot
(W)
0
a = 1.57
1.9
2.2
2.8
4.0
003aaf446
t
p
(s)
10
-5
10
-2
10
-3
10
-4
10
2
10
3
I
FSM
(A)
10
1
t
p
P
t
BYV25FX-600 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 7 March 2011 4 of 11
NXP Semiconductors
BYV25FX-600
Enhanced ultrafast power diode
5. Thermal characteristics
6. Isolation characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-h)
thermal resistance from
junction to heatsink
with heatsink compound;
see Figure 4
--5.5K/W
R
th(j-a)
thermal resistance from
junction to ambient
in free air - 55 - K/W
Fig 4. Transient thermal impedance from junction to heatsink as a function of pulse width
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
- - 2500 V
C
isol
isolation capacitance f = 1 MHz; from cathode to external
heatsink
-10-pF
BYV25FX-600 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 7 March 2011 5 of 11
NXP Semiconductors
BYV25FX-600
Enhanced ultrafast power diode
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
F
forward voltage I
F
=5A; T
j
= 25 °C; see Figure 5 -1.31.9V
I
F
=5A; T
j
= 150 °C; see Figure 5 -1.11.7V
I
R
reverse current V
R
=600V; T
j
= 100 °C - - 1.5 mA
V
R
=600V; T
j
=25°C --50µA
Dynamic characteristics
Q
r
recovered charge I
F
=1A; V
R
=30V; dI
F
/dt = 100 A/µs;
T
j
=25°C; see Figure 6
-13-nC
t
rr
reverse recovery time I
F
=1A; V
R
=30V; dI
F
/dt = 100 A/µs;
T
j
=25°C; see Figure 6
- 17.5 35 ns
I
RM
peak reverse recovery
current
I
F
=1A; V
R
=30V; dI
F
/dt = 100 A/µs;
T
j
=25°C; see Figure 6
-1.5-A
V
FRM
forward recovery
voltage
I
F
=1A; dI
F
/dt = 100 A/µs; T
j
=25°C;
see Figure 7
-3.2-V
V
o
= 1.499 V; R
s
= 0.041 Ω
(1) T
j
= 150 °C; typical values;
(2) T
j
= 150 °C; maximum values;
(3) T
j
= 25 °C; maximum values;
Fig 5. Forward current as a function of forward
voltage
Fig 6. Reverse recovery definitions; ramp recovery
003aaf445
V
F
(A)
0321
8
12
4
16
20
I
F
(A)
0
(1)
(2) (3)
003aac562
t
rr
time
100 %
25 %
I
F
dl
F
dt
I
R
I
RM
Q
r
P1-P3P4-P6P7-P9P10-P12

BYV25FX-600,127

Mfr. #:
Buy BYV25FX-600,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers PWR 600 V 5 A Diode
Lifecycle:
New from this manufacturer.
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