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Single-chip Type with Built-in FET Switching Regulator Series
High-efficiency Step-up/down
Switching Regulator
with Built-in Power MOSFET
BD8301MUV
General Description
ROHM’s highly-efficient step-up/down switching regulator BD8301MUV produces step-up/down output including 3.3 V from
1 cell of lithium battery with just one coil.
This IC adopts an original step-up/down drive system and creates a higher efficient power supply than conventional
Sepic-system or H-bridge system switching regulators.
Features
1) Highly-efficient step-up/down DC/DC converter to be constructed just with one inductor.
2) Input voltage 2.5 V - 5.5 V
3) Output current 1 A at 3.3 V
800 mA at 5.0 V
4) Incorporates soft-start function.
5) Incorporates timer latch system short protecting function.
6) High heat radiation surface mounted package VQFN020V4040
Application
General portable equipment like portable audio or DSC/DVC
Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Maximum applied power voltage Vcc,PVCC 7.0 V
Maximum input current Iinmax 2.0 A
Maximum input voltage
Lx1 7.0 V
Lx2 7.0 V
Power dissipation Pd 700 mW
Operating temperature range Topr -25 to +85 ºC
Storage temperature range Tstg -55 to +150 ºC
Junction temperature Tjmax 150 ºC
*1 When installed on a 70.0 mm × 70.0 mm × 1.6 mm glass epoxy board. The rating is reduced by 5.6 mW/°C at Ta = 25°C or more.
Operating Conditions (Ta = 25°C)
Parameter Symbol
Voltage range Unit
Power supply voltage Vcc 2.5 to 5.5 V
Output voltage OUT 2.8 to 5.2 V
No.09027ECT07
Technical Note
2/13
BD8301MUV
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Electrical Characteristics
(Unless otherwise specified, Ta = 25 °C, VCC = 3.7 V)
Parameter Symbol
Target Value
Unit Conditions
Min Typ Max
[Low voltage input malfunction preventing circuit]
Detection threshold voltage VUV - 2.25 2.45 V Vcc monitor
Hysteresis range ΔVUVhy 50 100 150 mV
[Oscillator]
Oscillation frequency fosc 0.8 1.0 1.2 MHz RT=47k
[Error AMP]
INV threshold voltage VINV 0.790 0.800 0.810 V
Input bias current IINV -50 0 50 nA Vcc=7.0V , VINV=3.5V
Soft-start time Tss 0.6 1.00 1.4 msec RT=47k
Output source current IEO 10 20 30 μA VINV=0.5V , VFB =1.5V
Output sink current IEI 0.7 1.5 3.0 mA VINV=1.1V , VFB =1.5V
[PWM comparator]
LX1 Max Duty Dmax1 - - 100 %
LX2 Max Duty Dmax2 77 85 93 %
[Output]
LX1 PMOS ON resistance RON1p - 120 200 m VGS=3.0V
LX1 NMOS ON resistance RON1n - 100 160 m VGS=3.0V
LX2 PMOS ON resistance RON2p - 120 200 m VGS=3.0V
LX2 NMOS ON resistance RON2n - 100 160 m VGS=3.0V
LX1 leak current I leak1 -1 0 1 μA
LX2 leak current I leak2 -1 0 1 μA
[STB]
STB pin ontrol voltage
Operation VSTBH 1.5 - 5.5 V
No-operation VSTBL -0.3 - 0.3 V
STB pin pull-down resistance RSTB 250 400 700 k
[Circuit current]
Standby current
VCC pin ISTB1 - - 1 μA
PVCC pin ISTB2 - - 1 μA
VOUT pin ISTB3 - - 1 μA
Circuit current at operation VCC Icc1 - 500 750 μA VINV=1.2V
Circuit current at operation PVCC Icc2 - 10 20 μA VINV=1.2V
Technical Note
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BD8301MUV
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Description of Pins
Block Diagram
Pin No. Pin Name Function
1 FB
Error AMP output terminal
2 INV
Error AMP input terminal
34
GND
Ground terminal
56 VOUT
Output voltage terminal
78 Lx2
Output side coil connecting terminal
912 PGND
Power transistor ground terminal
1314 Lx1
Input side coil connecting terminal
1517
PVCC
DC/DC converter input terminal
18 VCC
Control part power supply input
terminal
19 STB
ON/OFF terminal
20 RT
Oscillation frequency set terminal
12345
6
7
8
9
10
20
19
18
17
16
15 14 13 12 11
PGND
VOUT
PVCC
STB
FB
INV
GND
VOUT
RT
Lx2
PGND Lx1
PVCC
VCC
Reference
UVLO
VCC
PVCC
STB
PGND
LX1
PWM
CONTROL
q
GND
+
-
+
VREF
ERROR_AMP
Soft
Start
VOUT
LX2
OSC
STBY_IO
TIMMING
CONTROL
TIMMING
CONTROL
PRE
DRIVER
PRE
DRIVER
PRE
DRIVER
PRE
DRIVER
INV
FB
VREF
RT
SCP
16000 ount
FB H
STOP
Fig.1 Pin layout
Fig.2 Block diagram

BD8301MUV-E2

Mfr. #:
Manufacturer:
ROHM Semiconductor
Description:
Switching Voltage Regulators High Efficiency 3.5-14V 2.0A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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