ADA-4789-TR1G Datasheet ADA-4789-BLKG, ADA-4789-TR1G | P1-P3

ADA-4789

Silicon Bipolar Darlington Amplier

Data Sheet

Features

• Small Signal Gain Amplier

• Operating Frequency: DC – 2.5 GHz

• Unconditionally Stable

• 50 Ohms Input & Output

• Flat, Broadband Frequency Response up to 1 GHz

• Operating Current: 40 – 80 mA

• Industry Standard SOT-89 Package

• Single Supply

• VSWR < 2 Throughput Operating Frequency

Specications

900MHz, 3.80V, 60mA (Typical)

• 16.50 dB Associated Gain

• 17.10 dBm P1dB

• 32.60 dBm OIP3

• 4.20 dB Noise Figure

900MHz, 4.10V, 80mA (Typical)

• 16.90 dB Associated Gain

• 18.80 dBm P1dB

• 33.20 dBm OIP3

• 4.30 dB Noise Figure

Applications

• Cellular/PCS/WLL Base Stations

• Wireless Data/WLAN

• Fiber-Optic Systems

• ISM

Description

Avago Technologies’ ADA-4789 is an economical, easy-

to-use, general purpose silicon bipolar RFIC gain block

ampliers housed in SOT-89 surface mount plastic pack-

age.

The Darlington feedback structure provides inherent

broad bandwidth performance, resulting in useful oper-

ating frequency up to 2.5 GHz. This is an ideal device for

small-signal gain cascades or IF amplication.

ADA-4789 is fabricated using Avago’s HP25 silicon bi-

polar process, which employs a double-diused single

poly-silicon process with self-aligned submicron emitter

geometry. The process is capable of simultaneous high

fT and high NPN breakdown (25 GHz fT at 6V BVCEO).

The process utilizes industry standard device oxide isola-

tion technologies and submicron aluminum multi-layer

inter-connects to achieve superior performance, high

uniformity, and proven reliability.

Package Marking and Pin Connections

Note: Package marking provides orientation and identication

“4G” = Device Code

“x” = Month code indicates the month of manufacture

4GX

Top View

RFin GND RFout

#1 #2 #3

Bottom View

RFout GND RFin

#3 #2 #1

block

bypass

= 3.8 V

RFC

input

output

3Tx

- V

Typical Biasing Conguration

Notes:

1. Typical value determined from a sample size of 500 parts from 3 wafers.

2. Measurement obtained using production test board described in the block diagram below.

3. i) 100 MHz OIP3 Test Condition: F1 = 100 MHz, F2 = 105 MHz, Pin = -20 dBm per tone.

ii)900 MHz OIP3 Test Condition: F1 = 900 MHz, F2 = 905 MHz, Pin = -20 dBm per tone.

iii) 2000 MHz OIP3 Test Condition: F1 = 2000 MHz, F2 = 2005 MHz, Pin = -20 dBm per tone.

Table 2. Electrical Specications at Tc = +25°C

Symbol Parameter Unit MaxRating

Device Current mA 90

diss

Total Power Dissipation

[2]

mW 370

in max

RF Input Power dBm 20

Junction Temperature

C 150

stg

Storage Temperature

C -65 to 150

Thermal Resistance

[3] 0

C/W 50

Symbol Parameter and Test Condition:Id = 60mA, Zo = 50

Frequency Units Min. Typ. Max.

Device Voltage V 3.3 3.8 4.3

Power Gain 100 MHz

900 MHz

[1,2]

2.0 GHz

dB 15 16.9

16.5

16.2

Gain Flatness 100 to 900 MHz

0.1 to 2.0 GHz

dB 0.3

0.5

F3dB 3dB Bandwidth GHz 4

VSWR

Input Voltage Standing Wave Ratio 0.1 to 4.0 GHz 1.3:1

VSWR

out

Output Voltage Standing Wave Ratio 0.1 to 4.0 GHz 1.5:1

50W Noise Figure

100 MHz

900 MHz

[1,2]

2.0 GHz

dB 4.1

4.2

4.4

P1dB Output Power at 1dB Gain Compression 100 MHz

900 MHz

[1,2]

2.0 GHz

dBm 16.0 17.7

17.1

16.2

OIP3 Output Third Order Intercept Point 100 MHz

[3]

900 MHz

[1,2,3]

2.0 GHz

[3]

dBm 27 33.4

32.6

28.8

dV/dT Device Voltage Temperature Coecient mV/

C -4.9

Table 1. Absolute Maximum Ratings

[1]

at Tc = +25°C

Notes:

1. Operation in excess of any one of these conditions may result in

permanent damage to the device.

2. Ground lead temperature is 25°C. Derate 20 mW/°C for Tc > 131.5

°C.

3. Thermal Resistance is measured from junction to board using IR

method.

Table 3. Typical Electrical performance at Tc = +25°C, Id=80mA, Zo= 50 W

Notes:

1. Typical value determined from a sample size of 200 parts from 2 wafers.

2. Measurement obtained using production test board described in the block diagram below.

3 i) 100 MHz OIP3 Test Condition: F1 = 100 MHz, F2 = 105 MHz, Pin = -20 dBm per tone.

ii) 900 MHz OIP3 Test Condition: F1 = 900 MHz, F2 = 905 MHz, Pin = -20 dBm per tone.

iii) 2000 MHz OIP3 Test Condition: F1 = 2000 MHz, F2 = 2005 MHz, Pin = -20 dBm per tone.

Symbol Parameter and Test Condition: Frequency Units Min. Typ. Max.

Vd Device Voltage V 4.1

Gp Power Gain 100 MHz

900 MHz

[1,2]

2.0 GHz

dB 17.1

16.9

16.3

50W Noise Figure

100 MHz

900 MHz

[1,2]

2.0 GHz

dB 4.1

4.3

4.5

P1dB Output Power at 1dB Gain Compression 100 MHz

900 MHz

[1,2]

2.0 GHz

dBm 19.3

18.8

16.9

OIP3 Output Third Order Intercept Point 100 MHz

[3]

900 MHz

[1,2,3]

2.0 GHz

[3]

dBm 35.4

33.2

Input

50 Ohm

Transmission

(0.5 dB loss)

DUT

50 Ohm

Transmission

including Bias

(0.5 dB loss)

Output

Block Diagram

Block diagram of 900 MHz production test board used for Vd, Gain, P1dB, OIP3, and NF measurements show in table

2 & 3. Circuit losses have been de-embedded from actual measurement.

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

ADA-4789-TR1G

Mfr. #:

Buy ADA-4789-TR1G

Manufacturer:

Broadcom / Avago

Description:

Lifecycle:

New from this manufacturer.

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ADA-4789-TR1G

ADA-4789-TR1G

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