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BC856S,125

P1-P3P4-P6P7-P9P10-P12P13-P13
BC856S_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 19 February 2009 3 of 12
NXP Semiconductors
BC856S
65 V, 100 mA PNP/PNP general-purpose transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
(1) FR4 PCB, mounting pad for collector 1 cm
2
(2) FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves SOT363 (SC-88)
T
amb
(°C)
−75 17512525 75−25
006aab419
200
300
100
400
500
P
tot
(mW)
0
(1)
(2)
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 568 K/W
[2]
- - 500 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
- - 230 K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 416 K/W
[2]
- - 313 K/W
BC856S_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 19 February 2009 4 of 12
NXP Semiconductors
BC856S
65 V, 100 mA PNP/PNP general-purpose transistor
FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aab420
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
δ = 1
0.75
0.50
0.33
0.10
0.05
0.02
0.01
0
0.20
006aab421
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
δ = 1
0.75
0.50
0.33
0.10
0.05
0.02
0.01
0.20
0
BC856S_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 19 February 2009 5 of 12
NXP Semiconductors
BC856S
65 V, 100 mA PNP/PNP general-purpose transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-basecut-off
current
V
CB
= −30 V; I
E
=0A - - −15 nA
V
CB
= −30 V; I
E
=0A;
T
j
= 150 °C
--−5 µA
I
EBO
emitter-base cut-off
current
V
EB
= −5 V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −5 V; I
C
= −2 mA 110 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −10 mA;
I
B
= −0.5 mA
--−100 mV
I
C
= −100 mA; I
B
= −5mA
[1]
--−300 mV
V
BEsat
base-emitter
saturation voltage
I
C
= −10 mA;
I
B
= −0.5 mA
- 700 - mV
V
BE
base-emitter voltage I
C
= −2 mA; V
CE
= −5V −600 −650 −750 mV
I
C
= −10 mA; V
CE
= −5V - - −820 mV
C
c
collector capacitance I
E
=i
e
=0A;V
CB
= −10 V;
f=1MHz
- - 2.5 pF
f
T
transition frequency I
C
= −10 mA; V
CE
= −5V;
f = 100 MHz
100 - - MHz
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BC856S,125

Mfr. #:
Buy BC856S,125
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 65 V, 100 mA PNP/PNP General Purpose Tran
Lifecycle:
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