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SISH106DN-T1-GE3

P1-P3P4-P6P7-P7
SiSH106DN
www.vishay.com
Vishay Siliconix
S18-0684-Rev. A, 09-Jul-2018
1
Document Number: 79358
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 20 V (D-S) Fast Switching MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• 2.5 V rated R
DS(on)
• PWM optimized
• 100 % R
g
tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Synchronous rectification
•Load switch
Notes
a. Surface mounted on 1" x 1" FR4 board
b. See solder profile (www.vishay.com/doc?73257
). The PowerPAK 1212-8SH is a leadless package within the PowerPAK 1212-8 package
family. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at
the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
PRODUCT SUMMARY
V
DS
(V) 20
R
DS(on)
max. () at V
GS
= 4.5 V 0.0062
R
DS(on)
max. () at V
GS
= 2.5 V 0.0098
Q
g
typ. (nC) 17.5
I
D
(A) 19.5
Configuration Single
PowerPAK
®
1212-8SH
Bottom View
D
8
D
7
D
6
D
5
1
S
2
S
3
S
4
G
Top View
1
3.3 mm
3.3 mm
0.9 mm
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package PowerPAK 1212-8
Lead (Pb)-free and halogen-free SiSH106DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL 10 s STEADY STATE UNIT
Drain-source voltage V
DS
20 20
V
Gate-source voltage V
GS
± 12 ± 12
Continuous drain current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
19.5 12.5
A
T
A
= 70 °C 15.6 10
Pulsed drain current I
DM
60 60
Continuous source current (diode conduction)
a
I
S
3.2 1.3
Single avalanche current
L = 0.1 mH
I
AS
30 30
Single avalanche energy E
AS
45 45 mJ
Maximum power dissipation
a
T
A
= 25 °C
P
D
3.8 1.5
W
T
A
= 70 °C 2 0.8
Operating junction and storage temperature range T
J
, T
stg
-55 to +150
°C
Soldering recommendations (peak temperature)
b, c
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient
a
t 10 s
R
thJA
24 33
°C/WSteady state 65 81
Maximum junction-to-case (drain) Steady state R
thJC
1.9 2.4
SiSH106DN
www.vishay.com
Vishay Siliconix
S18-0684-Rev. A, 09-Jul-2018
2
Document Number: 79358
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Gate threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 0.6 - 1.5 V
Gate-body leakage I
GSS
V
DS
= 0 V, V
GS
= ± 12 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
DS
= 20 V, V
GS
= 0 V - - 1
μA
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C - - 5
On-state drain current
a
I
D(on)
V
DS
5 V, V
GS
= 4.5 V 40 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 19.5 A - 0.0051 0.0062
V
GS
= 2.5 V, I
D
= 15.5 A - 0.0081 0.0098
Forward transconductance
a
g
fs
V
DS
= 15 V, I
D
= 19.5 A - 105 - S
Diode forward voltage
a
V
SD
I
S
= 3.2 A, V
GS
= 0 V - 0.8 1.2 V
Dynamic
b
Total gate charge Q
g
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 19.5 A
- 17.5 27
nCGate-source charge Q
gs
-6.6-
Gate-drain charge Q
gd
-2.8-
Gate resistance R
g
f = 1 MHz 0.7 1.4 2.1
Turn-on delay time t
d(on)
V
DD
= 10 V, R
L
= 10
I
D
1 A, V
GEN
= 10 V, R
g
= 6
-2540
ns
Rise time t
r
-1525
Turn-off delay time t
d(off)
-5075
Fall time t
f
-1220
Source-drain reverse recovery time t
rr
I
F
= 3.2 A, di/dt = 100 A/μs - 30 60
SiSH106DN
www.vishay.com
Vishay Siliconix
S18-0684-Rev. A, 09-Jul-2018
3
Document Number: 79358
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
12
24
36
48
60
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
= 10 thru 2.5 V
1.5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
2 V
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0
10 20
30
40 50 60
R
DS(on)
I
D
- Drain Current (A)
V
GS
= 2.5 V
V
GS
= 4.5 V
0
1
2
3
4
5
0
41216
20
V
DS
= 10 V
I
D
= 19.5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
8
0
12
24
36
48
60
0.0 0.5 1.0 1.5 2.0 2.5
25 °C
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
700
1400
2100
2800
3500
0
515
10
20
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 19.5 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance (Normalized)
P1-P3P4-P6P7-P7

SISH106DN-T1-GE3

Mfr. #:
Buy SISH106DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V Vds; +/-12V Vgs PowerPAK 1212-8SH
Lifecycle:
New from this manufacturer.
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