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SISH106DN-T1-GE3

P1-P3P4-P6P7-P7
SiSH106DN
www.vishay.com
Vishay Siliconix
S18-0684-Rev. A, 09-Jul-2018
4
Document Number: 79358
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area
V
SD
- Source-to-Drain Voltage (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
60
10
1
- Source Current (A)I
S
T
J
= 150 °C
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
0.000
0.004
0.008
0.012
0.016
0.020
0.024
0 1 234
5
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 19.5 A
I
D
= 5 A
0.01
0
1
40
50
10
600
Time (s)
30
20
Power (W)
0.1 10 100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
T
A
= 25 °C
Single Pulse
- Drain Current (A)I
D
0.1
I
DM
Limited
I
D(on)
Limited
BV
DSS
Limited
P(t) = 10
DC
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
Limited by
R
DS(on)*
SiSH106DN
www.vishay.com
Vishay Siliconix
S18-0684-Rev. A, 09-Jul-2018
5
Document Number: 79358
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?79358
.
10
-3
10
-2
110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Package Information
www.vishay.com
Vishay Siliconix
Revision: 15-Jan-18
1
Document Number: 76384
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerPAK
®
1212-SWLH
DIM.
MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 0.82 0.90 0.98 0.032 0.035 0.038
A1 0 - 0.05 0 - 0.002
A3 0.20 ref. 0.008 ref.
b 0.30 BSC 0.012 BSC
D 3.30 BSC 0.130 BSC
D1 2.15 2.25 2.35 0.084 0.088 0.092
E 3.30 BSC 0.130 BSC
E1 1.60 1.70 1.80 0.063 0.067 0.071
e 0.65 BSC 0.026 BSC
K 0.76 typ. 0.030 typ.
K1 0.41 typ. 0.016 typ.
L 0.43 BSC 0.017 BSC
Z 0.525 typ. 0.021 typ.
ECN: C18-0001-Rev. A, 15-Jan-18
DWG: 6062
Backside view
1
2
3
4
5678
1
2
3
4
5678
D
E
D1
E1 K1
Z
L
b
K
e
A3
A1
A
C
0.08
C
0.10
C
0.10 C
2x
0.10
C
2x
P1-P3P4-P6P7-P7

SISH106DN-T1-GE3

Mfr. #:
Buy SISH106DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V Vds; +/-12V Vgs PowerPAK 1212-8SH
Lifecycle:
New from this manufacturer.
Delivery:
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