FDBL86066−F085
www.onsemi.com
2
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
q
JC
Thermal Resistance, Junction to Case 0.5
°C/W
R
q
JA
Thermal Resistance, Junction to Ambient (Note 3) 43
3. R
q
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. R
q
JC
is guaranteed by design, while R
q
JA
is determined by the board design. The maximum rating
presented here is based on mounting on a 1 in
2
pad of 2oz copper.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Symbol Parameter Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
BV
DSS
Drain-to-Source Breakdown Voltage
I
D
= 250 mA, V
GS
= 0 V
100 − − V
I
DSS
Drain-to-Source Leakage Current V
DS
= 100 V, V
GS
= 0 V
T
J
= 25°C
T
J
= 175°C (Note 4)
−
−
−
−
1
1
mA
I
GSS
Gate-to-Source Leakage Current V
GS
= ±20 V − − ±100 nA
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250 mA
2 2.9 4.0 V
R
DS(on)
Static Drain to Source On Resistance V
GS
= 10 V, I
D
= 80 A
T
J
= 25°C
T
J
= 175°C (Note 4)
−
−
3.3
7.3
4.1
8.8
mW
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
− 3240 − pF
C
oss
Output Capacitance − 1950 − pF
C
rss
Reverse Transfer Capacitance − 26 − pF
R
g
Gate Resistance V
GS
= 0.5 V, f = 1 MHz − 0.5 −
W
Q
g(tot)
Total Gate Charge V
GS
= 0 V to 10 V, V
DD
= 50 V, I
D
= 80 A − 47 69 nC
Q
g(th)
Threshold Gate Charge V
GS
= 0 V to 2 V, V
DD
= 50 V, I
D
= 80 A − 6 − nC
Q
gs
Gate to Source Charge V
DD
= 50 V, I
D
= 80 A − 15 − nC
Q
gd
Gate to Drain “Miller” Charge V
DD
= 50 V, I
D
= 80 A − 10 − nC
SWITCHING CHARACTERISTICS
t
on
Turn-On Time
V
DD
= 50 V, I
D
= 80 A, V
GS
= 10 V,
R
GEN
= 6 W
− − 35 ns
t
d(on)
Turn-On Delay − 18 − ns
t
r
Rise Time − 9 − ns
t
d(off)
Turn-Off Delay − 36 − ns
t
f
Fall Time − 13 − ns
t
off
Turn-Off Time − − 68 ns
DRAIN-SOURCE DIODE CHARACTERISTICS
V
SD
Source to Drain Diode Forward
Voltage
I
SD
= 80 A, V
GS
= 0 V − 0.9 1.25
V
I
SD
= 40 A, V
GS
= 0 V − 0.85 1.2
t
rr
Reverse Recovery Time I
F
= 80 A, dI
SD
/dt = 300 A/ms − 36 54 ns
Q
rr
Reverse Recovery Charge − 84 126 nC
t
rr
Reverse Recovery Time I
F
= 80 A, dI
SD
/dt = 1000 A/ms − 32 48 ns
Q
rr
Reverse Recovery Charge − 243 365 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at T
J
= 175°C. Product is not tested to this condition in production.
