FDBL86066−F085
www.onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 11. R
DS(on)
vs. Gate Voltage Figure 12. Normalized R
DS(on)
vs. Junction
Temperature
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 15. Capacitance vs. Drain to Source
Voltage
Figure 16. Gate Charge vs. Gate to Source
Voltage
45678910
0
5
10
15
20
25
30
I
D
= 80 A
PULSE DURATION = 250
ms
DUTY CYCLE = 0.5% MAX
r
DS(on)
, DRAIN TO SOURCE
ON−RESISTANCE (
mW)
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
= 25
o
C
T
J
= 175
o
C
−80
0.4
0.8
1.2
1.6
2.0
2.4
2.8
PULSE DURATION = 250 ms
DUTY CYCLE = 0.5% MAX
I
D
= 80 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
−40 0 40 80 120 160 200
0.4
0.6
0.8
1.0
1.2
V
GS
= V
DS
I
D
= 250 m A
NORMALIZED GATE
THRESHOLD VOLTAGE
T
J
, JUNCTION TEMPERATURE (
o
C)
−80 −40 0 40 80 120 160 200
0.90
0.95
1.00
1.05
1.10
I
D
= 1 mA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
T
J
, JUNCTION TEMPERATURE (
o
C)
−80 −40 0 40 80 120 160 200
0.1 1 10 100
1
10
100
1000
10000
f = 1 MHz
V
GS
= 0 V
C
rss
C
oss
C
iss
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
0
2
4
6
8
10
V
DD
= 50 V
V
DD
= 40 V
I
D = 80 A
V
DD
= 60 V
Q
g
, GATE CHARGE(nC)
V
GS
, GATE TO SOURCE VOLTAGE(V)
10 20 30 40 50
