IRLL014NPbF
HEXFET
®
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.14Ω
I
D
= 2.0A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
4/20/04
Description
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
SOT-223
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
Parameter Typ. Max. Units
R
θJA
Junction-to-Amb. (PCB Mount, steady state)* 90 120
R
θJA
Junction-to-Amb. (PCB Mount, steady state)** 50 60
Thermal Resistance
°C/W
Parameter Max. Units
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V** 2.8
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V* 2.0
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V* 1.6
I
DM
Pulsed Drain Current 16
P
D
@T
A
= 25°C Power Dissipation (PCB Mount)** 2.1 W
P
D
@T
A
= 25°C Power Dissipation (PCB Mount)* 1.0 W
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
V
GS
Gate-to-Source Voltage ± 16 V
E
AS
Single Pulse Avalanche Energy 32 mJ
I
AR
Avalanche Current 2.0 A
E
AR
Repetitive Avalanche Energy* 0.1 mJ
dv/dt Peak Diode Recovery dv/dt 7.2 V/ns
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
A
PD- 95154
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