IRLL014NTRPBF

P1-P3 P4-P6 P7-P9

IRLL014NPbF

4 www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0

100

200

300

400

1 10 100

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

4

8

12

16

20

0 3 6 9 12 15

Q , Total Gate Charge (nC)

G

V , Gate-to-Source Voltage (V)

GS

A

FOR TEST CIRCUIT

SEE FIGURE 9

I = 2.0A

V = 44V

V = 28V

D

DS

DS

0.1

1

10

100

0.4 0.6 0.8 1.0 1.2 1.4 1.6

T = 25°C

T = 150°C

J

J

V = 0V

GS

V , Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

A

0.1

1

10

100

1 10 100

V , Drain-to-Source Voltage (V)

DS

I , Drain Current (A)

OPERATION IN THIS AREA LIMITED

BY R

D

DS(on)

T = 25°C

T = 150°C

Single Pulse

10µs

100µs

1ms

10ms

A

A

J

IRLL014NPbF

www.irf.com 5

Q

G

Q

GS

Q

GD

V

G

Charge

+

-

V

DS

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

V

DD

R

G

D.U.T.

D.U.T.

V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

Fig 10a. Switching Time Test Circuit

Fig 9a. Basic Gate Charge Waveform

Fig 9b. Gate Charge Test Circuit

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

10V

0.1

1

10

100

1000

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t , Rectangular Pulse Duration (sec)

1

D = 0.50

0.01

0.02

0.05

0.10

0.20

SINGLE PULSE

(THERMAL RESPONSE)

A

Thermal Response (Z )

thJA

P

t

2

1

t

DM

Notes: 

1. Duty factor D = t / t

2. Peak T = P x Z + T 

12

J

DM

thJA

A 

IRLL014NPbF

6 www.irf.com

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

t

p

V

(BR)DSS

I

AS

0

20

40

60

80

25 50 75 100 125 150

J

E , Single Pulse Avalanche Energy (mJ)

AS

A

Starting T , Junction Temperature (°C)

V = 25V

I

TOP 1.8A

3.2A

BOTTOM 4.0A

DD

D

Fig 12a. Unclamped Inductive Test Circuit

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

DRIVER

A

15V

10V

P1-P3 P4-P6 P7-P9

IRLL014NTRPBF

Mfr. #:

Buy IRLL014NTRPBF

Manufacturer:

Infineon / IR

Description:

MOSFET MOSFT 55V 2A 140mOhm 9.5nC LogLvl

Lifecycle:

New from this manufacturer.

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