STSJ100NHS3LL

July 2006 Rev 3 1/12
12
STSJ100NHS3LL
N-channel 30V - 0.0032 - 20A - PowerSO-8™
STripFET™III Power MOSFET plus monolithic schottky
General features
Optimal R
DS(on)
x Qg trade-off @ 4.5V
Reduced switching losses
Reduced conduction losses
Improved junction-case thermal resistance
Description
This product utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology
and a propriertary process for integrating a
monolithic scottky diode. The new Power
MOSFET is optimized for the most demanding
synchronous switch function in DC-DC converter
for Computer and Telecom.
Applications
Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STSJ100NHS3LL 30V 0.0042 20A
(1)
1. This value is rated accordingly to Rthj-pcb
PowerSO-8
www.st.com
Order codes
Part number Marking Package Packaging
STSJ100NHS3LL 100HS3L- PowerSO-8 Tape & reel
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Contents STSJ100NHS3LL
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Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Obsolete Product(s) - Obsolete Product(s)
STSJ100NHS3LL Electrical ratings
3/12
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 30 V
V
GS
Gate-source voltage ±16 V
I
D
(1)
1. This value is rated accordingly to Rthj-pcb
Drain current (continuous) at T
C
= 25°C 20 A
I
D
(2)
2. This value is rated according to Rthj-c
Drain current (continuous) at T
C
=25°C 100 A
I
D
Drain current (continuous) at T
C
=100°C 12.6 A
I
DM
(3)
3. Pulse width limited by safe operating area
Drain current (pulsed) 80 A
P
TOT
Total dissipation at T
C
= 25°C
(2)
Total dissipation at T
C
= 25°C
(1)
70
3
W
W
T
J
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 2. Thermal data
Symbol Parameter Value Unit
R
thj-c
Thermal resistance junction-case max 1.8 °C/W
R
thj-pcb
(1)
1. When mounted on 1 inch² FR-4 board, 2oz Cu (t<10sec.)
Thermal resistance junction-pcb max 42 °C/W
Table 3. Avalanche data
Symbol Parameter Value Unit
I
AV
Avalanche current, not repetitive (pulse
width limited by Tjmax)
10 A
E
AS
Single pulse avalanche energy (starting
Tj=25°C, I
D
=I
AV
, V
DD
=24V)
1.8 J

STSJ100NHS3LL

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 30V 20A PWR8SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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