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STSJ100NHS3LL

P1-P3P4-P6P7-P9P10-P12
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Electrical characteristics STSJ100NHS3LL
4/12
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1mA, V
GS
= 0
30 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 24V
500 µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±16V
±100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 1mA
12.5V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 10A
0.0032
0.004
0.0042
0.0057
Ω
Ω
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 10A @125°C
V
GS
= 4.5V, I
D
= 10A @125°C
0.005
0.006
Ω
Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
V
DS
=10V, I
D
= 15A
44 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1MHz, V
GS
=0
4200
700
46.2
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 15V, I
D
= 20A
V
GS
= 4.5V,
(see Figure 13)
27
8.5
7.2
35 nC
nC
nC
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STSJ100NHS3LL Electrical characteristics
5/12
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
=15V, I
D
=10A,
R
G
=4.7Ω, V
GS
=4.5V
(see Figure 12)
16
45
ns
ns
t
d(off)
t
f
Turn-off delay time
Fall time
V
DD
=15V, I
D
=10A,
R
G
=4.7Ω, V
GS
=4.5V
(see Figure 12)
68
8
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current
(pulsed)
20
80
A
A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
I
SD
=5A, V
GS
=0
0.75 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=20A, di/dt = 100A/µs,
V
DD
=25V, Tj=150°C
(see Figure 17)
30
30
2
ns
nC
A
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Electrical characteristics STSJ100NHS3LL
6/12
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Normalized B
VDSS
vs temperature Figure 6. Static drain-source on resistance
P1-P3P4-P6P7-P9P10-P12

STSJ100NHS3LL

Mfr. #:
Buy STSJ100NHS3LL
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 30V 20A PWR8SOIC
Lifecycle:
New from this manufacturer.
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