Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 75 GB 60 DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
600 V
T
c
= 75°C I
C,nom.
75 A
T
c
= 25°C I
C
100 A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1ms, T
c
= 75°C I
CRM
150 A
Gesamt-Verlustleistung
total power dissipation
T
c
= 25°C, Transistor P
tot
355 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V V
Dauergleichstrom
DC forward current
I
F
75 A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1ms I
FRM
150 A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
I
2
t
450
A
2
s
Isolations-Prüfspannung
insulation test voltage
RMS, f= 50Hz, t= 1min.
V
ISOL
2,5 kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
min. typ. max.
I
C
= 75A, V
GE
= 15V, T
vj
= 25°C
- 1,95 2,45 V
I
C
= 75A, V
GE
= 15V, T
vj
= 125°C
- 2,20 - V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 1,5mA, V
CE
= V
GE
, T
vj
= 25°C V
GE(th)
4,5 5,5 6,5 V
Eingangskapazität
input capacitance
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V C
ies
- 3,3 - nF
Rückwirkungskapazität
reverse transfer capacitance
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V C
res
- 0,3 - nF
V
CE
= 600V, V
GE
= 0V, T
vj
= 25°C
- 1 500 µA
V
CE
= 600V, V
GE
= 0V, T
vj
= 125°C
-1-mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C I
GES
- - 400 nA
prepared by: Andreas Vetter date of publication: 2000-04-26
approved by: Michael Hornkamp revision: 1
Kollektor-Dauergleichstrom
DC-collector current
V
CE sat
I
CES
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Kollektor-Emitter Reststrom
collector-emitter cut-off current
1 (8)
BSM 75 GB 60 DLC
2000-02-08
