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BSM75GB60DLCHOSA1

P1-P3P4-P6P7-P9
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 75 GB 60 DLC
I
C
[A]
V
CE
[V]
I
C
[A]
V
CE
[V]
0
25
50
75
100
125
150
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5
Tvj = 25°C
Tvj = 125°C
Ausgangskennlinie (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
V
GE
= 15V
0
25
50
75
100
125
150
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VGE = 8V
VGE = 9V
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
Ausgangskennlinienfeld (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
T
vj
= 125°C
4 (8)
BSM 75 GB 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 75 GB 60 DLC
I
C
[A]
V
GE
[V]
I
F
[A]
V
F
[V]
0
25
50
75
100
125
150
5 6 7 8 9 10 11 12 13
Tvj = 25°C
Tvj = 125°C
Übertragungscharakteristik (typisch) I
C
= f (V
GE
)
Transfer characteristic (typical)
V
CE
= 20V
0
25
50
75
100
125
150
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6
Tvj = 25°C
Tvj = 125°C
Durchlaßkennlinie der Inversdiode (typisch) I
F
= f (V
F
)
Forward characteristic of inverse diode (typical)
5 (8)
BSM 75 GB 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 75 GB 60 DLC
E [mJ]
I
C
[A]
E [mJ]
R
G
[Ω
ΩΩ
Ω]
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
0 25 50 75 100 125 150
Eon
Eoff
Erec
Schaltverluste (typisch) E
on
= f (I
C
), E
off
= f (I
C
), E
rec
= f (I
C
)
Switching losses (typical)
R
G,on
= 3,0Ω,
Ω,Ω,
Ω,=
==
=R
G,off
= 3,0Ω
ΩΩ
Ω, V
CC
= 300V, T
vj
= 125°C
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
0 5 10 15 20 25 30
Eon
Eoff
Erec
Schaltverluste (typisch) E
on
= f (R
G
), E
off
= f (R
G
), E
rec
= f (R
G
)
Switching losses (typical)
I
C
= 75A , V
CC
= 300V , T
vj
= 125°C
6 (8)
BSM 75 GB 60 DLC
2000-02-08
P1-P3P4-P6P7-P9

BSM75GB60DLCHOSA1

Mfr. #:
Buy BSM75GB60DLCHOSA1
Manufacturer:
Infineon Technologies
Description:
IGBT MODULE 600V 100A
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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