74AHC_AHCT08_3 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 03 — 14 November 2007 6 of 14
NXP Semiconductors
74AHC08; 74AHCT08
Quad 2-input AND gate
10. Dynamic characteristics
[1] Typical values are measured at nominal supply voltage (V
CC
= 3.3 V and V
CC
= 5.0 V).
[2] t
pd
is the same as t
PLH
and t
PHL
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in µW).
P
D
=C
PD
× V
CC
2
× f
i
× N+Σ(C
L
× V
CC
2
× f
o
) where:
f
i
= input frequency in MHz, f
o
= output frequency in MHz
C
L
= output load capacitance in pF
V
CC
= supply voltage in Volts
N = number of inputs switching
Σ(C
L
× V
CC
2
× f
o
) = sum of the outputs.
Table 7. Dynamic characteristics
GND = 0 V; For test circuit see Figure 7.
Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ
[1]
Max Min Max Min Max
For type 74AHC08
t
pd
propagation
delay
nA, nB to nY; see Figure 6
[2]
V
CC
= 3.0 V to 3.6 V
C
L
= 15 pF - 4.0 8.8 1.0 10.5 1.0 11.0 ns
C
L
= 50 pF - 5.6 12.3 1.0 14 1.0 15.5 ns
V
CC
= 4.5 V to 5.5 V
C
L
= 15 pF - 3.0 5.9 1.0 7.0 1.0 7.5 ns
C
L
= 50 pF 4.2 7.9 1.0 9.0 1.0 10.0 ns
C
PD
power
dissipation
capacitance
C
L
= 50 pF; f
i
= 1 MHz;
V
I
= GND to V
CC
[3]
- 10.0 - - - - - pF
For type 74AHCT08
t
pd
propagation
delay
nA, nB to nY; see Figure 6
[2]
V
CC
= 4.5 V to 5.5 V
C
L
= 15 pF - 3.2 6.9 1.0 8.0 1.0 9.0 ns
C
L
= 50 pF - 4.2 7.9 1.0 9.0 1.0 10.0 ns
C
PD
power
dissipation
capacitance
C
L
= 50 pF; f
i
= 1 MHz;
V
I
= GND to V
CC
[3]
- 12.0 - - - - - pF
