High Voltage Standard Rectifier Module
3 1 2
Part number
MDA95-22N1B
Backside: isolated
FAV
F
V V1.13
RRM
120
2200
=
V
=
V
I
=
A
2x
Features / Advantages: Applications: Package:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For single and three phase
bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
TO-240AA
● Industry standard outline
● RoHS compliant
● Height: 30 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions.
20161222bData according to IEC 60747and per semiconductor unless otherwise specified
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