FSM
[A]
3000
1500
500
0
t [s]
10
-3
10
-2
10
-1
10
0
10
1
Fig. 1 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
T
VJ
= 45°C
T
VJ
= 150°C
50 Hz, 80% V
RRM
1000
2000
2500
V
R
= 0 V
t [ms]
I
2
t
[A
2
s]
10
5
10
4
1 2 3 6 8 10
T
VJ
= 45°C
T
VJ
= 150°C
Fig. 2 I
2
t versus time (1-10 ms)
Fig. 3 Maximum forward current
at case temperature
200
100
50
0
0 50 100 150
I
FAVM
[A]
T
C
[°C]
DC
180° sin
120°
60°
30°
150
200
250
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode)
DC
180° sin
120°
60°
30°
T
A
[°C]I
TAVM
, I
FAVM
[A]
150
100
50
0
P
T
[W]
R
thJA
[K/W]
0.4
0.6
0.8
1
1.2
1.5
2
3
0 50 100 2000 50 100 150 150
200
Fig. 6 Single phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature; R = resistive load,L = inductive load
R
thKA
[K/W]
0.1
0.15
0.2
0.3
0.4
0.5
0.6
0.7
0 50 100 200
T
A
[°C]I
dAVM
[A]
0 50 100
P
tot
[W]
200
0
400
600
800
Circuit
B2
2x MDD95
R
L
150 200 150250
Rectifier
IXYS reserves the right to change limits, conditions and dimensions.
20161222bData according to IEC 60747and per semiconductor unless otherwise specified
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