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Document Number: 69063
S09-0865-Rev. D, 18-May-09
Vishay Siliconix
Si7137DP
New Product
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= - 250 µA
- 20 V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= - 250 µA
- 14.5
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
4.1
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 0.5 - 1.4 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 12 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
- 1
µA
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
- 5
On-State Drain Current
a
I
D(on)
V
DS
≥ - 10 V, V
GS
= - 10 V - 40 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V, I
D
= - 25 A
0.0016 0.00195
Ω
V
GS
= - 4.5 V, I
D
= - 20 A
0.002 0.0025
V
GS
= - 2.5 V, I
D
= - 15 A
0.0031 0.0039
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 25 A
95 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
20 000
pFOutput Capacitance
C
oss
2150
Reverse Transfer Capacitance
C
rss
2650
Total Gate Charge
Q
g
V
DS
= - 10 V, V
GS
= - 10 V, I
D
= - 20 A
390 585
nC
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 20 A
188 282
Gate-Source Charge
Q
gs
33.6
Gate-Drain Charge
Q
gd
46
Gate Resistance
R
g
f = 1 MHz 0.9 1.8 3.6 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 1 Ω
I
D
≅ - 10 A, V
GEN
= - 10 V, R
g
= 1 Ω
20 40
ns
Rise Time
t
r
14 28
Turn-Off DelayTime
t
d(off)
230 400
Fall Time
t
f
72 125
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 1 Ω
I
D
≅ - 10 A, V
GEN
= - 4.5 V, R
g
= 1 Ω
100 170
Rise Time
t
r
150 255
Turn-Off DelayTime
t
d(off)
230 390
Fall Time
t
f
110 190
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current I
S
T
C
= 25 °C - 60
A
Pulse Diode Forward Current I
SM
- 100
Body Diode Voltage V
SD
I
S
= - 5 A, V
GS
= 0 V - 0.64 - 1.1 V
Body Diode Reverse Recovery Time t
rr
I
F
= - 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
88 140 ns
Body Diode Reverse Recovery Charge Q
rr
105 160 nC
Reverse Recovery Fall Time t
a
25
ns
Reverse Recovery Rise Time t
b
63
