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SI7137DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P13
www.vishay.com
4
Document Number: 69063
S09-0865-Rev. D, 18-May-09
Vishay Siliconix
Si7137DP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
0.01
0.001
0.1
10
100
T
J
= 25 °C
T
J
= 150 °C
- 0.4
- 0.2
0.0
0.2
0.4
0.6
0.8
- 50 - 25 0 25 50 75 100 125 150
Variance (V)V
GS(th)
T
J
- Temperature (°C)
I
D
= 250 µA
I
D
= 1 mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.000
0.002
0.004
0.006
0.008
0.010
012345678 910
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
=25 °C
T
J
= 125 °C
I
D
= - 25 A
0
40
80
120
160
200
011100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area
0.01
100
1
100
0.01
- DrainCurrent(A)
I
D
0.1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1ms
10 ms
100 ms
0.1 1 10
10
T
A
= 25 °C
Single Pulse
1s
DC
10 s
BVDSS
Limited byR
DS(on)
*
Vishay Siliconix
Si7137DP
Document Number: 69063
S09-0865-Rev. D, 18-May-09
www.vishay.com
5
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
36
72
108
144
180
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Package Limited
I
D
- Drain Current (A)
Power, Junction-to-Case
0
25
50
75
100
125
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power Derating, Junction-to-Ambient
0.0
0.6
1.2
1.8
2.4
3.0
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 69063
S09-0865-Rev. D, 18-May-09
Vishay Siliconix
Si7137DP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69063
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
000101110
-1
10
-4
100
0.2
0.1
0.05
0.02
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Duty Cycle = 0.5
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=54 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Single Pulse
Square WavePulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
0.02
0.05
P1-P3P4-P6P7-P9P10-P12P13-P13

SI7137DP-T1-GE3

Mfr. #:
Buy SI7137DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 12V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
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