PESD5V0U5BF_PESD5V0U5BV_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 15 August 2008 3 of 12
NXP Semiconductors
PESD5V0U5BF; PESD5V0U5BV
Ultra low capacitance bidirectional fivefold ESD protection arrays
4. Marking
5. Limiting values
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1, 3, 4, 5 or 6 to pin 2.
Table 5. Marking codes
Type number Marking code
PESD5V0U5BF B2
PESD5V0U5BV G7
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per device
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. ESD maximum ratings
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per diode
V
ESD
electrostatic discharge voltage
[1][2]
IEC 61000-4-2
(contact discharge)
-10kV
MIL-STD-883 (human
body model)
-8kV
