IXTH360N055T2 Datasheet IXTT360N055T2, IXTH360N055T2 | P1-P3

DS100169A(8/09)

IXTH360N055T2

IXTT360N055T2

TrenchT2

TM

Power

MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 175°C55 V

V

DGR

T

J

= 25°C to 175°C, R

GS

= 1MΩ 55 V

V

GSM

Transient ± 20 V

I

D25

T

C

= 25°C (Chip Capability) 360 A

I

LRMS

Lead Current Limit, RMS 160 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

900 A

I

A

T

C

= 25°C 180 A

E

AS

T

C

= 25°C 960 mJ

P

D

T

C

= 25°C 935 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

1.6mm (0.062in.) from Case for 10s 300 °C

T

sold

Plastic Body for 10 seconds 260 °C

M

d

Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in.

Weight TO-247 6 g

TO-268 4 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 250μA 55 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250μA 2.0 4.0 V

I

GSS

V

GS

= ± 20V, V

DS

= 0V ±200 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 10 μA

T

J

= 150°C 300 μA

R

DS(on)

V

GS

= 10V, I

D

= 100A, Note 1 2.4 mΩ

V

DSS

= 55V

I

D25

= 360A

R

DS(on)

≤≤

≤

2.4m

ΩΩ

Ω

Features

z

International Standard Package

z

175°C Operating Temperature

z

High Current Handling Capability

z

Avalanche Rated

z

Fast Intrinsic Diode

z

Low R

DS(on)

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

DC/DC Converters and Off-line UPS

z

Primary- Side Switch

z

High Current Switching Applications

G = Gate D = Drain

S = Source TAB = Drain

(TAB)

TO-268 (IXTT)

G

S

D (TAB)

TO-247 (IXTH)

G

D

S

Preliminary Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTH360N055T2

IXTT360N055T2

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 60A, Note 1 65 110 S

C

iss

20 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 2650 pF

C

rss

480 pF

R

Gi

Gate Input Resistance 1.6 Ω

t

d(on)

30 ns

t

r

23 ns

t

d(off)

62 ns

t

f

56 ns

Q

g(on)

330 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

76 nC

Q

gd

87 nC

R

thJC

0.16 °C/W

R

thCH

TO-247 0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 360 A

I

SM

Repetitive, Pulse Width Limited by T

JM

1440 A

V

SD

I

F

= 100A, V

GS

= 0V, Note 1 1.3 V

t

rr

78 ns

I

RM

4.2

A

Q

RM

164 nC

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 100A

R

G

= 2Ω (External)

I

F

= 150A, V

GS

= 0V

-di/dt = 100A/μs

V

R

= 27V

e

∅ P

TO-247 (IXTH) Outline

1 2 3

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

TO-268 Outline

Fig. 1. Output Characteristics

@ 25ºC

0

50

100

150

200

250

300

350

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

7V

4V

5V

6V

8V

Fig. 3. Output Characteristics

@ 150ºC

0

50

100

150

200

250

300

350

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

7

V

5

V

6

V

4

V

8

V

Fig. 4. R

DS(on)

Normalized to I

D

= 180A Value vs.

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 300A

I

D

= 180A

Fig. 5. R

DS(on)

Normalized to I

D

= 180A Value vs.

Drain Current

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

0 50 100 150 200 250 300 350

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

15V

- - - - -

T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Drain Current vs. Case Temperature

0

20

40

60

80

100

120

140

160

180

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

Fig. 2. Extended Output Characteristics

@ 25ºC

0

50

100

150

200

250

300

350

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

4V

5V

IXTH360N055T2

IXTT360N055T2

IXTH360N055T2

IXTH360N055T2

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