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IXTH360N055T2

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH360N055T2
IXTT360N055T2
IXYS REF: T_360N055T2(V8)7-14-09
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
40
80
120
160
200
240
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
50
100
150
200
250
300
0.30.40.50.60.70.80.91.01.11.2
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 50 100 150 200 250 300 350
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 27.5V
I
D
= 180A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
110100
V
DS
- Volts
I
D
- Amperes
25µs
100µs
1ms
10ms
DC
R
DS(on)
Limit
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
External Lead Current Limit
100ms
© 2009 IXYS CORPORATION, All Rights Reserved
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
10
20
30
40
50
60
70
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 2 , V
GS
= 10V
V
DS
= 27.5V
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
50
100
150
200
250
300
350
400
450
500
23456789101112131415
R
G
- Ohms
t
r
- Nanoseconds
20
30
40
50
60
70
80
90
100
110
120
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 27.5V
I
D
= 100A
I
D
= 200A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
20
30
40
50
60
70
80
90
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
40
50
60
70
80
90
100
110
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2, V
GS
= 10V
V
DS
= 27.5V
I
D
= 100A
I
D
= 200A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
35
40
45
50
55
60
65
70
75
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
f
- Nanoseconds
40
50
60
70
80
90
100
110
120
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2, V
GS
= 10V
V
DS
= 27.5V
T
J
= 25ºC, 125ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
0
10
20
30
40
50
60
70
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 2 , V
GS
= 10V
V
DS
= 27.5V
I
D
= 200A
I
D
= 100A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
0
50
100
150
200
250
300
350
400
450
500
2 3 4 5 6 7 8 9 101112131415
R
G
- Ohms
t
f
- Nanoseconds
0
50
100
150
200
250
300
350
400
450
500
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 27.5V
I
D
= 100A, 200A
IXTH360N055T2
IXTT360N055T2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH360N055T2
IXTT360N055T2
IXYS REF: T_360N055T2(V8)7-14-09
Fig. 19. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 19. Maximum Transient Thermal Impedance
0.20
P1-P3P4-P6

IXTH360N055T2

Mfr. #:
Buy IXTH360N055T2
Manufacturer:
Littelfuse
Description:
MOSFET 360Amps 55V
Lifecycle:
New from this manufacturer.
Delivery:
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