FDD4243-F085 P-Channel PowerTrench
®
MOSFET
www.onsemi.com
2
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage -40 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current Continuous (T
C
< 130
o
C, V
GS
= 10V) -14
A
Pulsed See Figure 4
E
AS
Single Pulse Avalanche Energe (Note 1) 84 mJ
P
D
Power Dissipation 50 W
Dreate above 25
o
C0.34W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to +175
o
C
R
JC
Maximum Thermal Resistance Junction to Case 3
o
C/W
R
JA
Maximum Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area 40
o
C/W
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= -250A, V
GS
= 0V -40 - - V
BV
DSS
T
J
ID = -250μA, referenced to 25°C - -32 - mV/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -32V
T
J
= 125
o
C
---1
A
---100
I
GSS
Gate to Source Leakage Current V
GS
= ±20V - - ±100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= -250A -1.4 -1.6 -3.0 V
V
GS(th)
T
J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = –250μA, referenced to 25°C - 4.7 - mV/°C
r
DS(on)
Drain to Source On Resistance
I
D
= -6.7A, V
GS
= -10V - 36 44
m
I
D
= -5.5A, V
GS
= -4.5V - 48 64
I
D
= -6.7A, V
GS
= -10V,
T
J
= 150
o
C
-
57 70
g
FS
Forward Transconductance I
D
= –6.7A, V
DS
= –5V, - 23 - S
C
iss
Input Capacitance
V
DS
= -20V, V
GS
= 0V,
f = 1MHz
- 1165 1550 pF
C
oss
Output Capacitance - 165 220 pF
C
rss
Reverse Transfer Capacitance - 90 135 pF
R
G
Gate Resistance f = 1MHz - 4 -
Q
g(TOT)
Total Gate Charge
V
DD
= -20V, V
GS
= -10V
I
D
= -6.7A
-2129nC
Q
gs
Gate to Source Gate Charge - 3.4 - nC
Q
gd
Gate to Drain “Miller“ Charge - 4 - nC
Breakdown Voltage Temperature
Coefficient
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD4243
FDD4243-F085
TO252 13” 12mm 2500 units
Note:
1. A suffix as “...F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially announced
in Aug 2014.
Electrical Characteristics T
J
= 25°C unless otherwise noted
