FDD4243-F085 P-Channel PowerTrench
®
MOSFET
www.onsemi.com
5
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
11090
0.1
1
10
100
300
100us
1ms
10ms
-I
D
, DRAIN CURRENT (A)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
DC
10.1110100
1
10
40
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
-I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
0123456
0
10
20
30
40
50
60
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
V
DD
= -5V
-I
D
, DRAIN CURRENT (A)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
01234
0
10
20
30
40
50
60
V
GS
= -5V
V
GS
= -3V
V
GS
= -4V
V
GS
= -4.5V
V
GS
= -6V
V
GS
= -10V
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
246810
20
40
60
80
100
120
140
160
180
200
I
D
= -6.7A
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
r
DS(on)
, DRAIN TO SOURCE
ON-RESISTANCE
(m)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
= 25
o
C
T
J
= 175
o
C
-80 -40 0 40 80 120 160 200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
I
D
= -6.7A
V
GS
= -10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE(
o
C)
