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NUS2045MNT1

P1-P3P4-P6P7-P9P10-P12
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 4
Publication Order Number:
NUS2045MN/D
NUS2045MN, NUS3045MN
Overvoltage Protection IC
with Integrated MOSFET
These devices represent a new level of safety and integration by
combining the NCP345 overvoltage protection circuit (OVP) with a
20 V P−channel power MOSFET (NUS2045MN) or with a 30 V
P−channel power MOSFET (NUS3045MN). They are specifically
designed to protect sensitive electronic circuitry from overvoltage
transients and power supply faults. During such hazardous events, the
IC quickly disconnects the input supply from the load, thus protecting
the load before any damage can occur.
The OVP ICs are optimized for applications using an external
AC−DC adapter or a car accessory charger to power a portable product
or recharge its internal batteries. They have a nominal overvoltage
threshold of 6.85 V which makes them ideal for single cell Li−Ion as
well as 3/4 cell NiCD/NiMH applications.
Features
• OvervoltageTurn−Off Time of Less Than 1.0 ms
• Accurate Voltage Threshold of 6.85 V, Nominal
• Undervoltage Lockout Protection; 2.8 V, Nominal
• Control Input Compatible with 1.8 V Logic Levels
• −20 V or −30 V Integrated P−Channel Power MOSFET
• Low R
DS(on)
= 71 mW @ −4.5 V for NUS2045MN
Low R
DS(on)
= 66 mW @ −4.5 V for NUS3045MN
• Low Profile 3.3 x 3.3 mm DFN Package Suitable for Portable
Applications
• Maximum Solder Reflow temperature @ 235°C for MNT1 suffix and
260°C for MNT1G suffix
• Pb−Free Packages are Available
Benefits
• Provide Battery Protection
• Integrated Solution Offers Cost and Space Savings
• Integrated Solution Improves System Reliability
Applications
• Portable Computers and PDAs
• Cell Phones and Handheld Products
• Digital Cameras
http://onsemi.com
DFN8
CASE 506AL
Device Package Shipping
†
ORDERING INFORMATION
NUS2045MNT1 DFN8 3000 Tape & Ree
l
IN
GND
CNTRL
DRAIN
V
CC
OUT
GATE
SRC
(Bottom View)
PIN ASSIGNMENT
x045 = Device Code
x = 2 or 3
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
x045
AYWWG
G
1
1
2
3
4
8
7
6
5
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NUS3045MNT1 DFN8 3000 Tape & Ree
l
1
8
GND
DRAIN
10
9
NUS2045MNT1G DFN8
(Pb−Free)
3000 Tape & Ree
l
NUS3045MNT1G DFN8
(Pb−Free)
3000 Tape & Ree
l
NUS2045MN, NUS3045MN
http://onsemi.com
2
Figure 1. Simplified Schematic
−
+
IN
V
CC
GND
CNTRL
OUT
GATE
Schottky
Diode
LOAD
Microprocessor Port
NUSx045
C1
Undervoltage
Lock Out
Logic
FET
Driver
P−CH
V
ref
AC/DC Adapter of
Accessory Charger
+
PIN FUNCTION DESCRIPTIONS
Pin # Symbol Pin Description
1 IN This pin senses an external voltage point. If the voltage on this input rises above the overvoltage threshold
(V
TH
), the OUT pin will be driven to within 1.0 V of V
CC
, thus disconnecting the FET. The nominal threshold level
is 6.85 V and this threshold level can be increased with the addition of an external resistor between IN and V
CC
.
2, 10 GND Circuit Ground
3 CNTRL This logic signal is used to control the state of OUT and turn−on/off the P−channel MOSFET. A logic High
results in the OUT signal being driven to within 1.0 V of V
CC
which disconnects the FET. If this pin is not used,
the input should be connected to ground.
4, 9 DRAIN Drain pin of the power MOSFET
5 SRC Source pin of the power MOSFET
6 GATE Gate pin of the power MOSFET
7 OUT This signal drives the gate of a P−channel MOSFET. It is controlled by the voltage level on IN or the logic state
of the CNTRL input. When an overvoltage event is detected, the OUT pin is driven to within 1.0 V of V
CC
in less
than 1.0 _sec provided that gate and stray capacitance is less than 12 nF.
8 V
CC
Positive Voltage supply. If V
CC
falls below 2.8 V (nom), the OUT pin will be driven to within 1.0 V of V
CC
, thus
disconnecting the P−channel FET.
OVERVOLTAGE PROTECTION CIRCUIT TRUTH TABLE
IN CNTRL OUT
<V
th
L GND
<V
th
H V
CC
>V
th
L V
CC
>V
th
H V
CC
NUS2045MN, NUS3045MN
http://onsemi.com
3
MAXIMUM RATINGS (T
A
= 25°C unless otherwise stated)
Rating Pin Symbol Min Max Unit
OUT Voltage to GND 7 V
O
−0.3 30 V
Input and CNTRL Pin Voltage to GND 1
3
V
input
V
CNTRL
−0.3
−0.3
30
13
V
VCC Maximum Range 8 V
CC(max)
−0.3 30 V
Maximum Power Dissipation (Note 1) − P
D
− 1.0 W
Thermal Resistance Junction−to−Air (Note 1) OVP IC
P−Channel FET
− R
θ
JA
− 108.6
104.3
°C/W
Junction Temperature − T
J
− 150 °C
Operating Ambient Temperature − T
A
−40 85 °C
V
CNTRL
Operating Voltage 3 − 0 5.0 V
Storage Temperature Range − T
stg
−65 150 °C
ESD Performance (HBM) (Note 2) 1,2,3,7,8,10 − 2.5 − kV
Drain−to−Source Voltage
NUS2045MN
NUS3045MN
V
DSS
−20
−30
V
Gate−to−Source Voltage
NUS2045MN
NUS3045MN
V
GS
−8
−20
8
20
V
Continuous Drain Current, Steady State, T
A
= 25°C (Note 1)
NUS2045MN
NUS3045MN
I
D
−1.0
−1.0
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Human body model (HBM): MIL STD 883C Method 3015−7, (R = 1500 W, C = 100 pF, F = 3 pulses delay 1 s).
P1-P3P4-P6P7-P9P10-P12

NUS2045MNT1

Mfr. #:
Buy NUS2045MNT1
Manufacturer:
ON Semiconductor
Description:
IC OVP W/20V P-CH MOSFET DFN8
Lifecycle:
New from this manufacturer.
Delivery:
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