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NUS2045MNT1
P1-P3
P4-P6
P7-P9
P10-P12
NUS2045MN, NUS3045MN
http://onsemi.com
7
TYPICAL PERFORMANCE CUR
VES
(T
A
= 25
°
C, unless otherwise specified)
30 V
, P−CHANNEL MOSFET
−8
V
0
12
9
1.2
0.8
−V
DS
, DRAIN−TO−SOURCE VOL
T
AGE (VOL
TS)
−I
D,
DRAIN CURRENT (AMPS)
3
0
0.4
Figure 4. On−Region Characteristics
Figure 5. On−Resistance vs. Gate−to−Source
V
oltage
15
1000
100
Figure 6. Drain−to−Source Leakage Current
vs. V
oltage
−V
DS
, DRAIN−TO−SOURCE VOL
T
AGE (VOL
TS)
−I
DSS,
LEAKAGE CURRENT (nA)
21
0
0.1
Figure 7. Diode Forward V
oltage vs. Current
−V
GS,
GA
TE VOL
T
AGE (VOL
TS)
T
J
= 25
°
C
100000
5
V
GS
= 0 V
R
DS(on),
DRAIN−T
O−SOURCE RESIST
ANCE (
W
)
−3 V
25
30
−3.2 V
−3.4 V
−4.5 V
0.2
1.6
2
10000
46
8
0
6
10
T
J
= 100
°
C
T
J
= 150
°
C
9
357
T
J
= 25
°
C
I
D
= −3.7 A
20
11
8
2
5
10
7
1
4
3.2
2.8
2.4
3.6
4
−3.6 V
−3.8 V
−4 V
−4.2 V
−10V
−6 V
−5 V
−5.5 V
0.9
1
−V
SD
, SOURCE−TO−DRAIN VOL
T
AGE (VOL
TS)
−I
S
, SOURCE CURRENT (AMPS)
T
J
= 25
°
C
1.0
0.4
0.3
10
0.5
0.8
0.6
0.1
0.7
1.1
V
GS
= 0 V
T
J
= −55
°
C
T
J
= 150
°
C
T
J
= 100
°
C
NUS2045MN, NUS3045MN
http://onsemi.com
8
TYPICAL PERFORMANCE CUR
VES
(T
A
= 25
°
C, unless otherwise specified)
20 V
, P−CHANNEL MOSFET
08
100
−V
DS,
DRAIN−TO−SOURCE VOL
T
AGE (VOL
TS)
100000
1.0
−I
DSS
, LEAKAGE (nA)
10000
10
1000
46
T
J
= 125
°
C
2
V
GS
= 0 V
10
12
14
16
.
0
10
5
8
6
3
2
−V
DS
, DRAIN−TO−SOURCE VOL
T
AGE (VOL
TS)
−I
D,
DRAIN CURRENT (AMPS)
6
2
0
1
Figure 8. On−Region Characteristics
Figure 9. On−Resistance vs. Drain Current and
T
emperature
0.02
7
9
0.04
0
Figure 10. Drain−to−Source Leakage Current
vs. V
oltage
−I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−T
O−SOURCE RESIST
ANCE (
W
)
T
J
= 25
°
C
0.1
13
4
−1.6 V
−1.8 V
−2.0 V
−2.2 V
78
0.06
V
GS
= −10 V − −2.4 V
T = 125
°
C
4
0.08
5
0.01
0.03
0.05
0.07
0.09
T = 25
°
C
T = −55
°
C
V
GS
= −5.0 V
Figure 1
1. Diode Forward V
oltage vs. Current
T
J
= 150
°
C
0
−V
SD
, SOURCE−TO−DRAIN VOL
T
AGE (VOL
TS)
−I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
T
J
= 25
°
C
1.
0
0.2
0.4
0.5
4.5
0.6
0.8
1.5
2.5
3.5
0
1
2
3
4
5
NUS2045MN, NUS3045MN
http://onsemi.com
9
TYPICAL APPLICA
TION CIRCUITS & OPERA
TION W
A
VEFORMS
(T
A
= 25
°
C, unless otherwise specified)
20 V
, P−CHANNEL MOSFET
Figure 12. T
est Circuit for T
ON
IN
and T
OFF
IN
−
+
IN
V
CC
GND
CNTRL
OUT
GA
TE
NUSx045
Undervoltage
Lock Out
Logic
FET
Driver
P−CH
V
ref
12
W
6 Vdc
8 Vdc
Input V
oltage
T
ON
IN
T
est
T
A
=25
°
C
Figure 13. T
ON
IN
W
aveforms
Output V
oltage
T
ON
IN
P1-P3
P4-P6
P7-P9
P10-P12
NUS2045MNT1
Mfr. #:
Buy NUS2045MNT1
Manufacturer:
ON Semiconductor
Description:
IC OVP W/20V P-CH MOSFET DFN8
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
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