TSM120NA03CR RLG Datasheet TSM120NA03CR RLG | P1-P3

TSM120NA03CR

Taiwan Semiconductor

1 Version: B1610

N-Channel Power MOSFET

30V, 39A, 11.7mΩ

FEATURES

● Low R

DS(ON)

to minimize conductive loss

● Low gate charge for fast power switching

● 100% UIS and R

g

tested

● Compliant to RoHS directive 2011/65/EU and in

accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● DC-DC Converters

● Battery Power Management

● ORing FET/Load Switch

KEY PERFORMANCE PARAMETERS

PARAMETER

VALUE

UNIT

V

DS

30

V

R

DS(on)

(max)

V

GS

= 10V

11.7

mΩ

V

GS

= 4.5V

14.9

Q

g

4.5

nC

PDFN56

Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V

DS

30

V

Gate-Source Voltage

V

GS

±20

V

Continuous Drain Current

(Note 1)

T

C

= 25°C

I

D

39

A

T

A

= 25°C

11

Pulsed Drain Current

I

DM

156

A

Single Pulse Avalanche Current

(Note 2)

I

AS

15.6

A

Single Pulse Avalanche Energy

(Note 2)

E

AS

36.5

mJ

Total Power Dissipation

T

C

= 25°C

P

D

33

W

T

C

= 125°C

6.6

Total Power Dissipation

T

A

= 25°C

P

D

2.6

W

T

A

= 125°C

0.5

Operating Junction and Storage Temperature Range

T

J

, T

STG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction to Case Thermal Resistance

R

ӨJC

3.8

°C/W

Junction to Ambient Thermal Resistance

R

ӨJA

48

°C/W

Thermal Performance Note: R

ӨJA

is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-

thermal reference is defined at the solder mounting surface of the drain pins. R

ӨJA

is guaranteed by design while R

ӨCA

is

determined by the user’s board design.

TSM120NA03CR

Taiwan Semiconductor

2 Version: B1610

ELECTRICAL SPECIFICATIONS (T

A

= 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

Drain-Source Breakdown Voltage

V

GS

= 0V, I

D

= 250µA

BV

DSS

30

--

V

Gate Threshold Voltage

V

GS

= V

DS

, I

D

= 250µA

V

GS(TH)

1.2

1.9

2.5

V

Gate-Source Leakage Current

V

GS

= ±20V, V

DS

= 0V

I

GSS

--

±100

nA

Drain-Source Leakage Current

V

GS

= 0V, V

DS

= 30V

I

DSS

--

1

µA

V

GS

= 0V, V

DS

= 30V

T

J

= 125°C

--

100

Drain-Source On-State Resistance

(Note 3)

V

GS

= 10V, I

D

= 11A

R

DS(on)

--

8.3

11.7

mΩ

V

GS

= 4.5V, I

D

= 11A

--

11.9

14.9

Forward Transconductance

(Note 3)

V

DS

= 5V, I

D

= 11A

g

fs

--

35

--

S

Dynamic

(Note 4)

Total Gate Charge

V

GS

= 10V, V

DS

= 15V,

I

D

= 11A

Q

g

--

9.2

--

nC

Total Gate Charge

V

GS

= 4.5V, V

DS

= 15V,

I

D

= 11A

Q

g

--

4.5

--

Gate-Source Charge

Q

gs

--

1.9

--

Gate-Drain Charge

Q

gd

--

1.7

--

Input Capacitance

V

GS

= 0V, V

DS

= 15V

f = 1.0MHz

C

iss

--

562

--

pF

Output Capacitance

C

oss

--

144

--

Reverse Transfer Capacitance

C

rss

--

50

--

Gate Resistance

f = 1.0MHz

R

g

0.5

1.7

3.4

Ω

Switching

(Note 4)

Turn-On Delay Time

V

GS

= 10V, V

DS

= 15V,

I

D

= 7A, R

G

= 10Ω,

t

d(on)

--

8.4

--

ns

Turn-On Rise Time

t

r

--

4.3

--

Turn-Off Delay Time

t

d(off)

--

22.4

--

Turn-Off Fall Time

t

f

--

3.1

--

Source-Drain Diode

Forward Voltage

(Note 3)

V

GS

= 0V, I

S

= 11A

V

SD

--

1.2

V

Reverse Recovery Time

I

S

= 11A ,

dI/dt = 100A/μs

t

rr

--

14.7

--

ns

Reverse Recovery Charge

Q

rr

--

7.3

--

nC

Notes:

1. Silicon limited current only.

2. L = 0.3mH, V

GS

= 10V, V

DS

= 25V, R

G

= 25Ω, I

AS

= 15.6A, Starting T

J

= 25°C

3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.

4. Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TSM120NA03CR RLG

PDFN56

2,500pcs / 13” Reel

TSM120NA03CR

Taiwan Semiconductor

3 Version: B1610

0

6

12

18

24

30

0 1 2 3 4

25

℃

-55℃

150

℃

CHARACTERISTICS CURVES

(T

A

= 25°C unless otherwise noted)

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current

Gate-Source Voltage vs. Gate Charge

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-Source Voltage

I

D

, Drain Current (A)

V

GS

, Gate to Source Voltage (V)

V

DS

, Drain to Source Voltage (V)

R

DS(ON)

, Drain-Source On-Resistance (Ω)

I

D

, Drain Current (A)

V

GS

, Gate to Source Voltage (V)

Q

g

, Gate Charge (nC)

R

DS(on)

, Drain-Source On-Resistance

(Normalized)

T

J

, Junction Temperature (°C)

R

DS(on)

, Drain-Source On-Resistance (Ω)

V

GS

, Gate to Source Voltage (V)

0

6

12

18

24

30

0 1 2 3 4

V

GS

=10V

V

GS

=7V

V

GS

=5V

V

GS

=4.5V

V

GS

=4V

V

GS

=3.5V

V

GS

=3V

0.002

0.004

0.006

0.008

0.01

0.012

0.014

0.016

0 6 12 18 24 30

V

GS

=10V

V

GS

=4.5V

0

2

4

6

8

10

0 2 4 6 8 10

V

DS

=15V

I

D

=11A

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-75 -50 -25 0 25 50 75 100 125 150

V

GS

=10V

I

D

=11A

I

D

, Drain Current (A)

0

0.005

0.01

0.015

0.02

0.025

0.03

3 4 5 6 7 8 9 10

I

D

=11A

TSM120NA03CR RLG

TSM120NA03CR RLG

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