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TSM120NA03CR RLG

P1-P3P4-P6
TSM120NA03CR
Taiwan Semiconductor
4 Version: B1610
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Capacitance vs. Drain-Source Voltage
BV
DSS
vs. Junction Temperature
Maximum Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Current vs. Voltage
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance, Z
ӨJC
t, Square Wave Pulse Duration (sec)
C, Capacitance (pF)
V
DS
, Drain to Source Voltage (V)
BV
DSS
(Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature (°C)
0.1
1
10
100
0.2 0.4 0.6 0.8 1 1.2
25℃
150℃
-55℃
0
100
200
300
400
500
600
700
0 5 10 15 20 25 30
CISS
COSS
CRSS
0.8
0.9
1
1.1
1.2
-75 -50 -25 0 25 50 75 100 125 150
I
D
=1mA
1
10
100
0.1 1 10 100
I
D
, Drain Current (A)
V
DS,
Drain to Source Voltage (V)
R
DS(ON)
SINGLE PULSE
R
ӨJC
=3.8°C/W
T
C
=25°C
200
0.01
0.1
1
10
0.0001 0.001 0.01 0.1
SINGLE PULSE
R
ӨJC
=3.8°C/W
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
I
S
, Reverse Drain Current (A)
V
SD
, Body Diode Forward Voltage (V)
Notes:
Duty = t
1
/ t
2
T
J
= T
C
+ P
DM
x Z
ӨJC
x R
ӨJC
TSM120NA03CR
Taiwan Semiconductor
5 Version: B1610
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
PDFN56
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
G
= Halogen Free
Y
= Year Code
WW
= Week Code (01~52)
F
= Factory Code
TSC
120NA03
GYWWF
TSM120NA03CR
Taiwan Semiconductor
6 Version: B1610
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
P1-P3P4-P6

TSM120NA03CR RLG

Mfr. #:
Buy TSM120NA03CR RLG
Manufacturer:
Taiwan Semiconductor
Description:
N-Channel Power MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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