ACS110-7SN/SB2
2/10
Symbol Parameter Value Unit
V
DRM
/V
RRM
Repetitive peak off-state voltage Tj = -10 °C 700 V
I
T(RMS)
RMS on-state current full cycle sine wave
50 to 60 Hz
SOT-223 Ttab = 105 °C 1 A
DIL-8 Tlead = 110 °C
I
TSM
Non repetitive surge peak on-state current
Tj initial = 25°C, full cycle sine wave
F =50 Hz 8 A
F =60 Hz 11 A
I
2
t Fusing capability tp = 10ms 0.35 A²s
dI/dt Repetitive on-state current critical rate of
rise I
G
= 10mA (tr < 100ns)
Tj = 125°C
F = 120 Hz 50 A/µs
V
PP
Non repetitive line peak pulse voltage
note 1
2kV
Tstg Storage temperature range - 40 to + 150 °C
Tj Operating junction temperature range - 30 to + 125 °C
Tl Maximum lead soldering temperature during 10s 260 °C
Note 1: according to test described by IEC61000-4-5 standard & Figure 3.
ABSOLUTE RATINGS (limiting values)
For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage
Symbol Parameter Value Unit
P
G (AV)
Average gate power dissipation 0.1 W
I
GM
Peak gate current (tp = 20µs) 1 A
V
GM
Peak positive gate voltage (in respect to pin COM) 5 V
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient S = 5cm² SOT-223 60 °C/W
DIL-8 60 °C/W
Rth (j-l) Junction to tab/lead for full cycle sine wave conduction SOT-223 20 °C/W
DIL-8 15 °C/W
S = Copper surface under Tab
THERMAL RESISTANCES
