NSBC114EPDXV6T1, NSBC114EPDXV6T5
http://onsemi.com
12
TYPICAL ELECTRICAL CHARACTERISTICS - NSBC114YPDXV6T1 PNP TRANSISTOR
10
1
0.1
010 20 30 4050
100
10
1
0 246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 1520253035404550
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 37. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
02040 60 80
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 38. DC Current Gain
1 10 100
I
C
, COLLECTOR CURRENT (mA)
Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
Figure 41. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
T
A
=75°C
V
CE
= 10 V
180
160
140
120
100
80
60
40
20
0
2 4 6 8 15 20 40 50 60 70 80 90
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
25°C
I
C
/I
B
= 10
T
A
=-25°C
T
A
=75°C
25°C
-25°C
V
O
= 5 V
V
O
= 0.2 V
25°C
T
A
=-25°C
75°C
75°C