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NSBC143TPDXV6T5G

P1-P3P4-P6P7-P9P10-P12P13-P14
NSBC114EPDXV6T1, NSBC114EPDXV6T5
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, - minus sign for Q
1
(PNP) omitted)
Characteristic UnitMaxTypMinSymbol
ON CHARACTERISTICS (Note 3)
Input Resistor NSBC114EPDXV6T1, G
NSBC124EPDXV6T1, G
NSBC144EPDXV6T1, G
NSBC114YPDXV6T1, G
NSBC114TPDXV6T1, G
NSBC143TPDXV6T1, G
NSBC113EPDXV6T1, G
NSBC123EPDXV6T1, G
NSBC143EPDXV6T1, G
NSBC143ZPDXV6T1, G
NSBC124XPDXV6T1, G
NSBC123JPDXV6T1, G
R1 7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
k W
Resistor Ratio
NSBC114EPDXV6T1, G
NSBC124EPDXV6T1, G
NSBC144EPDXV6T1, G
NSBC114YPDXV6T1, G
NSBC114TPDXV6T1, G
NSBC143TPDXV6T1, G
NSBC113EPDXV6T1, G
NSBC123EPDXV6T1, G
NSBC143EPDXV6T1, G
NSBC143ZPDXV6T1, G
NSBC124XPDXV6T1, G
NSBC123JPDXV6T1, G
R1/R2
0.8
0.8
0.8
0.17
-
-
0.8
0.8
0.8
0.055
0.38
0.038
1.0
1.0
1.0
0.21
-
-
1.0
1.0
1.0
0.1
0.47
0.047
1.2
1.2
1.2
0.25
-
-
1.2
1.2
1.2
0.185
0.56
0.056
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Figure 1. Derating Curve
300
200
150
100
50
0
-50 0 50 100 150
T
A
, AMBIENT TEMPERATURE (°C)
R
q
JA
= 490°C/W
250
P
D
, POWER DISSIPATION (mW)
NSBC114EPDXV6T1, NSBC114EPDXV6T5
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS - NSBC114EPDXV6T1 NPN TRANSISTOR
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 2. V
CE(sat)
versus I
C
1002030
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
T
A
=-25°C
75°C
25°C
40
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.001
020 40
50
I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1000
100
10
1 10 100
I
C
, COLLECTOR CURRENT (mA)
T
A
=75°C
25°C
-25°C
T
A
=-25°C
25°C
Figure 5. Output Current versus Input Voltage
75°C
25°C
T
A
=-25°C
100
10
1
0.1
0.01
0.001
01 234
V
in
, INPUT VOLTAGE (VOLTS)
56 78910
Figure 6. Input Voltage versus Output Current
50
010203040
4
3
1
2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
75°C
V
CE
= 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
NSBC114EPDXV6T1, NSBC114EPDXV6T5
http://onsemi.com
6
TYPICAL ELECTRICAL CHARACTERISTICS - NSBC114EPDXV6T1 PNP TRANSISTOR
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 7. V
CE(sat)
versus I
C
100
10
1
0.1
0.01
0.001
0
V
in
, INPUT VOLTAGE (VOLTS)
T
A
=-25°C
25°C
1 2 3 4 5
6 7 8 9 10
Figure 8. DC Current Gain
Figure 9. Output Capacitance Figure 10. Output Current versus Input
Voltage
Figure 11. Input Voltage versus Output Current
0.01
20
I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLT
S
0.1
1
0 40
50
1000
1 10 100
I
C
, COLLECTOR CURRENT (mA)
T
A
=75°C
-25°C
100
10
0
I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
T
A
=-25°C
25°C
75°C
75°C
I
C
/I
B
= 10
50
0102030 40
4
3
1
2
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
0
T
A
=-25°C
25°C
75°C
25°C
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
P1-P3P4-P6P7-P9P10-P12P13-P14

NSBC143TPDXV6T5G

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Buy NSBC143TPDXV6T5G
Manufacturer:
ON Semiconductor
Description:
TRANS PREBIAS NPN/PNP SOT563
Lifecycle:
New from this manufacturer.
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