IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA90N15T IXTH90N15T
IXTP90N15T IXTQ90N15T
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1 40 69 S
C
iss
4100 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 560 pF
C
rss
92 pF
t
d(on)
Resistive Switching Times 24 ns
t
r
V
GS
= 15V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
22 ns
t
d(off)
R
G
= 3.3Ω (External) 44 ns
t
f
19 ns
Q
g(on)
80 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 25A 20 nC
Q
gd
20 nC
R
thJC
0.33 °C/W
R
thCH
TO-220 0.25 °C/W
TO-3P, TO-263, TO-247 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0V 90 A
I
SM
Repetitive 300 A
V
SD
I
F
= 50A, V
GS
= 0V, Note 1 1.2 V
t
rr
I
F
=45A, -di/dt = 250A/μs 110 ns
V
R
= 75V, V
GS
= 0V
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
*: Current may be limited by external terminal current limit.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
