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IXTP90N15T

P1-P3P4-P6
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA90N15T IXTH90N15T
IXTP90N15T IXTQ90N15T
Fig. 1. Output Characteristics
@ 25ºC
0
10
20
30
40
50
60
70
80
90
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
180
200
220
240
0 2 4 6 8 10 12 14 16 18
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
7V
5V
Fig. 3. Output Characteristics
@ 150ºC
0
10
20
30
40
50
60
70
80
90
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 45A Value
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 90A
I
D
= 45A
Fig. 5. R
DS(on)
Normalized to I
D
= 45A Value
vs. Drain Current
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0 40 80 120 160 200 240
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V
- - - -
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
© 2007 IXYS CORPORATION, All rights reserved
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
110
33.544.555.56
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
0 102030405060708090100110120
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
40
80
120
160
200
240
280
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 1020304050607080
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 75V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Maximum Transient Thermal
Impedance
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXTA90N15T IXTH90N15T
IXTP90N15T IXTQ90N15T
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA90N15T IXTH90N15T
IXTP90N15T IXTQ90N15T
IXYS REF: T_90N15T(5G)8-08-07-A
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
13
15
17
19
21
23
25
27
29
31
20 25 30 35 40 45 50 55 60 65 70 75 80 85 90
I
D
- Amperes
t
r
- Nanosecond
s
R
G
= 3.3
Ω
V
GS
= 10V
V
DS
= 75V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
10
20
30
40
50
60
70
80
90
100
2 4 6 8 10 12 14 16
R
G
- Ohms
t
r
- Nanoseconds
23
24
25
26
27
28
29
30
31
32
33
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 75V
I
D
= 90A
I
D
= 45A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
16
17
18
19
20
21
22
23
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanosecond
s
30
35
40
45
50
55
60
65
t
d ( o f f )
- Nanosecond
s
t
f
t
d(off)
- - - -
R
G
= 3.3
Ω
, V
GS
= 10V
V
DS
= 75V
I
D
= 90A
I
D
= 45A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
16
17
18
19
20
21
22
20 30 40 50 60 70 80 90
I
D
- Amperes
t
f
- Nanoseconds
30
35
40
45
50
55
60
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3
Ω
, V
GS
= 10V
V
DS
= 75V
T
J
= 125ºC
T
J
= 25ºC
T
J
= 25ºC
T
J
= 125ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
12
14
16
18
20
22
24
26
28
30
32
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanosecond
s
R
G
= 3.3
Ω
V
GS
= 10V
V
DS
= 75V
I
D
= 90A
I
D
= 45A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
0
10
20
30
40
50
60
70
80
90
2 4 6 8 10 12 14 16
R
G
- Ohms
t
f
- Nanoseconds
20
30
40
50
60
70
80
90
100
110
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 75V
I
D
= 45A, 90A
P1-P3P4-P6

IXTP90N15T

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Description:
MOSFET N-CH 150V 90A TO-220
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