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AUIRF1404ZSTRL

P1-P3P4-P6P7-P9P10-P12P13-P13
AUIRF1404Z
AUIRF1404ZS
AUIRF1404ZL
V
DSS
40V
R
DS(on)
max.
3.7m
I
D (Silicon Limited)
180A
I
D (Package Limited)
160A
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
1 2015-11-11
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 180
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 120
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 160
I
DM
Pulsed Drain Current 710
P
D
@T
C
= 25°C Maximum Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 330
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value 480
I
AR
Avalanche Current See Fig.15,16, 12a, 12b A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.75
°C/W
R
CS
Case-to-Sink, Flat, Greased Surface 0.50 –––
R
JA
Junction-to-Ambient ––– 62
R
JA
Junction-to-Ambient ( PCB Mount, steady state) 40
TO-220AB
AUIRF1404Z
D
2
Pak
AUIRF1404ZS
TO-262
AUIRF1404ZL
S
D
G
S
D
G
S
D
G
D
Base part number Package Type
Standard Pack
Form Quantity
AUIRF1404Z TO-220 Tube 50 AUIRF1404Z
AUIRF1404ZL TO-262 Tube 50 AUIRF1404ZL
AUIRF1404ZS D
2
-Pak
Tube 50 AUIRF1404ZS
Tape and Reel Left 800 AUIRF1404ZSTRL
Orderable Part Number
G D S
Gate Drain Source
HEXFET
®
Power MOSFET
AUIRF1404Z/S/L
2 2015-11-11
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.11mH, R
G
= 25, I
AS
= 75A, V
GS
=10V. Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, starting T
J
= 25°C, L = 0.11mH, R
G
= 25, I
AS
= 75A, V
GS
=10V.
This is only applied to TO-220AB pakcage.
This is applied to D
2
Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
TO-220 device will have an Rth value of 0.65°C/W.
R
is measured at T
J
approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current limit is 160A.
Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.033 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– 2.7 3.7
m
V
GS
= 10V, I
D
= 75A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
gfs Forward Trans conductance 170 ––– ––– S V
DS
= 25V, I
D
= 75A
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
=40 V, V
GS
= 0V
––– ––– 250 V
DS
=40V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -200 V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge ––– 100 150
nC
I
D
= 75A
Q
gs
Gate-to-Source Charge ––– 31 ––– V
DS
= 32V
Q
gd
Gate-to-Drain Charge ––– 42 –––
V
GS
= 10V
t
d(on)
Turn-On Delay Time ––– 18 –––
ns
V
DD
= 20V
t
r
Rise Time ––– 110 –––
I
D
= 75A
t
d(off)
Turn-Off Delay Time ––– 36 –––
R
G
= 3.0
t
f
Fall Time ––– 58 –––
V
GS
= 10V
L
D
Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 –––
from package
and center of die contact
C
iss
Input Capacitance ––– 4340 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 1030 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 550 –––
ƒ = 1.0MHz
C
oss
Output Capacitance ––– 3300 ––– V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
C
oss
Output Capacitance ––– 920 ––– V
GS
= 0V, V
DS
= 32V ƒ = 1.0MHz
C
oss eff.
Effective Output Capacitance
––– 1350 ––– V
GS
= 0V, V
DS
= 0V to 32V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 160
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 750
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C,I
S
= 75A,V
GS
= 0V 
t
rr
Reverse Recovery Time ––– 28 42 ns
T
J
= 25°C ,I
F
= 75A, V
DD
= 20V
Q
rr
Reverse Recovery Charge ––– 34 51 nC
di/dt = 100A/µs 
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
AUIRF1404Z/S/L
3 2015-11-11
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 4 Typical Forward Trans conductance
vs. Drain Current
Fig. 1 Typical Output Characteristics
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0
V
GS
, Gate-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
A
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 15V
20µs PULSE WIDTH
0 40 80 120 160
I
D,
Drain-to-Source Current (A)
0
40
80
120
160
200
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 15V
20µs PULSE WIDTH
P1-P3P4-P6P7-P9P10-P12P13-P13

AUIRF1404ZSTRL

Mfr. #:
Buy AUIRF1404ZSTRL
Manufacturer:
Infineon Technologies
Description:
MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms
Lifecycle:
New from this manufacturer.
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