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AUIRF1404ZSTRL
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
AUIRF1404Z/S/L
4
2015-11-11
Fig 5.
Typical Capacitance vs.
Drain-to-Source
Voltage
Fig 6.
Typic
al Gate Charge vs.
Gate-to-Source Voltage
Fig 8.
Maximum Safe Operating Area
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
r
ai
n-
t
o-
Sour
ce Vol
t
age (V
)
0
2000
4000
6000
8000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Cr
ss
Ciss
V
GS
=
0V,
f = 1 MH
Z
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RTED
C
rs
s
= C
gd
C
oss
= C
ds
+ C
gd
0
40
80
120
160
Q
G
Tot
al
G
at
e Char
ge (
nC
)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
=
32V
VDS= 20V
I
D
=
75A
0
.2
0.6
1.0
1
.4
1
.8
V
SD
,
Sour
ce-
t
oDr
a
i
n Vol
t
age (
V)
0.
1
1.
0
10.
0
100.
0
1000.
0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 2
5°C
T
J
=
175°
C
V
GS
= 0V
0
1
10
100
1000
V
DS
,
Dr
ai
n-
t
oSour
ce V
ol
t
age (
V)
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc =
25°C
Tj
=
175°
C
Si
ngl
e Pul
se
1msec
10msec
OP
ER
AT
ION
IN T
HIS
ARE
A
LIMI
TED BY R
DS
(
on)
100µsec
AUIRF1404Z/S/L
5
2015-11-11
Fig 10.
Normalized On-Resistance
vs. Temperature
Fig 11.
Maximum Effective Transient Thermal Impedance, Jun
ction-to-Case
Fig 9.
Maximum Drain Current vs. Case Temperature
25
50
75
1
00
125
150
175
T
C
,
Case Temperat
ur
e (
°
C)
0
50
100
150
200
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Li
mi
t
ed B
y Package
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
T
J
,
Junct
i
on Tem
per
at
ur
e (
°
C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 75
A
V
GS
= 10
V
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
1
,
Rect
angul
ar
Pul
se D
ur
at
i
on (
sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.
20
0.
10
D = 0.
50
0.
02
0.
01
0.
05
SI
NGLE PU
LSE
(
THERM
AL RESPO
NSE )
Notes:
1
. Du
ty F
ac
to
r D
= t1
/t2
2.
Peak Tj
=
P d
m x Zt
hj
c +
Tc
AUIRF1404Z/S/L
6
2015-11-11
Fig 14.
Threshold Voltage vs. Temperature
Fig 12c.
Maximum Avalanche Energy
vs. Drain Current
Fig 12a.
Unclamped Inductive Test Circuit
Fig 12b.
Unclamped Inductive Waveforms
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
t
p
V
(BR)DS
S
I
AS
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
25
50
75
100
125
150
175
St
ar
t
i
ng T
J
,
Juncti
on Temper
at
ur
e (
°
C)
0
100
200
300
400
500
600
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
ID
TOP 31A
53
A
BOTTOM 75A
-75
-50
-25
0
25
50
75
100
125
150
175
T
J
,
Tem
per
at
ur
e (
°
C )
1.0
2.0
3.0
4.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
=
250µA
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
AUIRF1404ZSTRL
Mfr. #:
Buy AUIRF1404ZSTRL
Manufacturer:
Infineon Technologies
Description:
MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms
Lifecycle:
New from this manufacturer.
Delivery:
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