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CGHV40320D-GP4

P1-P3P4-P6P7-P7
1
Subject to change without notice.
www.cree.com/rf
CGHV40320D
320 W, 4.0 GHz, GaN HEMT Die
Cree’s CGHV40320D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN
has superior properties compared to silicon or gallium arsenide, including higher breakdown
voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs
offer greater power density and wider bandwidths compared to Si and GaAs transistors.
FEATURES
• 19 dB Typical Small Signal Gain at 4 GHz
• 65% TypicalPowerAddedEfciency
• 320 W Typical P
SAT
• 50 V Operation
• High Breakdown Voltage
• Up to 4 GHz Operation
APPLICATIONS
• Broadbandampliers
• Tactical communications
• Satellite communications
• Industrial,Scientic,andMedicalampli-
ers
• ClassAB,Linearamplierssuitablefor
OFDM, W-CDMA, LTE, EDGE, CDMA
waveforms
Packaging Information
• Bare die are shipped on tape or in Gel-Pak® containers.
• Non-adhesive tacky membrane immobilizes die during
shipment.
Rev 0.0 – December 2014
2
CGHV40320D Rev 0.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specic product and/or vendor endorsement, sponsorship or association.
Absolute Maximum Ratings (not simultaneous)
Parameter Symbol Rating Units Conditions
Drain-source Voltage V
DSS
150 V
DC
25˚C
Gate-source Voltage V
GS
-10, +2 V
DC
25˚C
Storage Temperature T
STG
-65, +150 ˚C
Operating Junction Temperature T
J
225 ˚C
Maximum Drain Current
1
I
MAX
12 A 25˚C
Maximum Forward Gate Current I
GMAX
41.8 mA 25˚C
Thermal Resistance, Junction to Case (packaged)
2
R
θJC
0.44 ˚C/W 85˚C,167.2WDissipation
Thermal Resistance, Junction to Case (die only) R
θJC
0.35 ˚C/W 85˚C,167.2WDissipation
Mounting Temperature T
S
320 ˚C 30 seconds
Note
1
Current limit for long term reliable operation.
Note
2
Eutecticdieattachusing80/20AuSnmountedtoa10milthickCu15Mo85carrier.
Electrical Characteristics (Frequency = 4 GHz unless otherwise stated; T
C
= 25˚C)
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics
Gate Pinch-Off Voltage V
P
-3.8 -3.0 –2.3 V V
DS
= 10 V, I
D
= 41.8 mA
Drain Current
1
I
DSS
33 41.8 – A V
DS
= 6 V, V
GS
= 2.0 V
Drain-Source Breakdown Voltage V
BD
150 – – V V
GS
= -8 V, I
D
= 41.8 mA
On Resistance R
ON
– 0.07 – Ω V
DS
= 0.1 V
Gate Forward Voltage V
G-ON
– 1.9 – V I
GS
= 41.8 mA
RF Characteristics
Small Signal Gain G
SS
– 19 – dB V
DD
= 50 V, I
DQ
= 500 mA
Saturated Power Output
2
P
SAT
– 320 – W V
DD
= 50 V, I
DQ
= 500 mA
DrainEfciency
3
η
– 65 – % V
DD
= 50 V, I
DQ
= 500 mA, P
SAT
= 320 W
Intermodulation Distortion IM3 – -30 – dBc
V
DD
= 50 V, I
DQ
= 500 mA,
P
OUT
= 320 W PEP
Output Mismatch Stress VSWR – – 10 : 1
Y
No damage at all phase angles,
V
DD
= 50 V, I
DQ
= 500 mA,
P
OUT
= 320 W Pulsed
Dynamic Characteristics
Input Capacitance C
GS
– 55.6 – pF V
DS
= 50 V, V
gs
= -8 V, f = 1 MHz
Output Capacitance C
DS
– 11.56 – pF V
DS
= 50 V, V
gs
= -8 V, f = 1 MHz
Feedback Capacitance C
GD
– 1.23 – pF V
DS
= 50 V, V
gs
= -8 V, f = 1 MHz
Notes:
1
Scaled from PCM data
2
P
SAT
isdenedasI
G
= 4.0 mA.
3
DrainEfciency=P
OUT
/P
DC
3
CGHV40320D Rev 0.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specic product and/or vendor endorsement, sponsorship or association.
DIE Dimensions (units in microns)
Overalldiesize6100x1110(+0/-50)microns,diethickness100microns.
All Gate and Drain pads must be wire bonded for electrical connection.
Assembly Notes:
• RecommendedsolderisAuSn(80/20)solder.RefertoCree’swebsitefortheEutecticDieBondProcedure
applicationnoteatwww.cree.com/wireless.
• Vacuum collet is the preferred method of pick-up.
• The backside of the die is the Source (ground) contact.
• Die back side gold plating is 5 microns thick minimum.
• Thermosonic ball or wedge bonding are the preferred connection methods.
• Gold wire must be used for connections.
• Use the die label (XX-YY) for correct orientation.
P1-P3P4-P6P7-P7

CGHV40320D-GP4

Mfr. #:
Buy CGHV40320D-GP4
Manufacturer:
N/A
Description:
RF JFET Transistors GaN HEMT Die DC-4.0GHz, 320 Watt
Lifecycle:
New from this manufacturer.
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