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TZA3011AVH/C2,551

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 13 of 30
Philips Semiconductors
TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
Extinction ratio setting for dual-loop control: pins MON and ER
ER
min
low extinction ratio setting dual-loop set-up; IER > −30 µA
[3]
linear scale - 5 7
dB scale - 7 8.5 dB
ER
max
high extinction ratio setting dual-loop set-up; IER < −10 µA
[3]
linear scale 13 15 -
dB scale 11 11.8 - dB
ER
acc
relative accuracy of ER temperature and V
CCA
variations;
ER = 10; AVR = 550 µA
−10 - +10 %
V
ref(ER)
reference voltage on
pin ER
I
ER
= −35 µA to −5 µA; C
ER
< 100 pF 1.15 1.20 1.25 V
I
ER
current sink on pin ER −35 - −5 µA
Average setting for dual-loop control and average loop control: pins MON and AVR
I
av(MON)(low)
low average monitor
current setting
I
AVR
> −280 µA
dual-loop (ER = 5) - - 150 µA
average loop (pin ER to GND) - - 150 µA
I
av(MON)(max)
maximum average monitor
current setting
I
AVR
= −15.0 µA
dual-loop (ER = 5) 1200 1300 - µA
average loop (pin ER to GND) 1200 1300 - µA
∆I
av(MON)
relative accuracy of
average current on
pin MON
temperature and V
CCA
variations;
ER = 10; AVR = 550 µA
−10 - +10 %
V
ref(AVR)
reference voltage on
pin AVR
I
AVR
= −250 µA to −15 µA;
C
AVR
< 100 pF
1.15 1.20 1.25 V
I
sink(AVR)
current sink on pin AVR −280 - −15 µA
Control loop modulation output: pin MODOUT
I
source(MODOUT)
source current V
MODOUT
= 0.5 V to 1.5 V;
C
MODOUT
< 100 pF
-- −200 µA
I
sink(MODOUT)
sink current V
MODOUT
= 0.5 V to 1.5 V;
C
MODOUT
< 100 pF
200 - - µA
Control loop bias output: pin BIASOUT
I
source(BIASOUT)
source current V
BIASOUT
= 0.5 V to 1.5 V;
C
BIASOUT
< 100 pF
-- −200 µA
I
sink(BIASOUT)
sink current V
BIASOUT
= 0.5 V to 1.5 V;
C
BIASOUT
< 100 pF
200 - - µA
Bias current source: pins BIASIN and BIAS
g
m(bias)
bias transconductance V
BIASIN
= 0.5 V to 1.5 V
V
BIAS
=V
CCO
= 3.3 V 90 110 125 mA/V
V
BIAS
= 4.1 V; V
CCO
= 5.0 V 95 110 130 mA/V
I
source(BIASIN)
source current at
pin BIASIN
V
BIASIN
= 0.5 V to 1.5 V −110 −100 −95 µA
Table 7: Characteristics
…continued
T
amb
=
−
40
°
C to +85
°
C; R
th(j-a)
= 35 K/W; P
tot
= 400 mW; V
CCA
= 3.14 V to 3.47 V; V
CCD
= 3.14 V to 3.47 V; V
CCO
= 3.14 V
to 3.47 V; R
AVR
= 7.5 k
Ω
;R
ER
=62k
Ω
;R
MODIN
= 6.2 k
Ω
;R
BIASIN
= 6.8 k
Ω
;R
PWA
=10k
Ω
;R
RREF
=10k
Ω
;R
MAXMON
=13k
Ω
;
R
MAXOP
=20k
Ω
; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 14 of 30
Philips Semiconductors
TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
I
BIAS(max)
maximum bias current V
BIASIN
= 1.8 V 100 - - mA
I
BIAS(min)
minimum bias current V
BIASIN
= 0 V to 0.4 V - 0.2 0.4 mA
I
BIAS(dis)
bias current at disable V
ENABLE
< 0.8 V - - 30 µA
V
BIAS
output voltage on pin BIAS normal operation
V
CCO
= 3.3 V 0.4 - 3.6 V
V
CCO
= 5 V 0.8 - 4.1 V
Modulation current source: pin MODIN
g
m(mod)
modulation
transconductance
V
MODIN
= 0.5 V to 1.5 V
V
LA
=V
LAQ
=V
CCO
= 3.3 V 78 90 105 mA/V
V
LA
=V
LAQ
=V
CCO
= 4.5 V 80 95 110 mA/V
I
source(MODIN)
source current at
pin MODIN
V
MODIN
= 0.5 V to 1.5 V −110 −100 −95 µA
Modulation current outputs: pins LA
I
o(LA)(max)(on)
maximum laser modulation
output current at LA on
V
MODIN
= 1.8 V; V
LA
=V
CCO
= 3.3 V
[4]
100 - - mA
I
o(LA)(min)(on)
minimum laser modulation
output current at LA on
V
MODIN
= 0 V to 0.4 V;
V
LA
=V
CCO
= 3.3 V
[4]
-5 6mA
I
o(LA)(min)(off)
minimum laser modulation
output current at LA off
V
LA
=V
CCO
= 3.3 V
[4]
V
MODIN
= 0.5 V - - 0.8 mA
V
MODIN
= 1.5 V - - 2 mA
Z
o(LA)
, Z
o(LAQ)
output impedance LA and
LAQ pins
80 100 125 Ω
I
o(LA)(dis)
,
I
o(LAQ)(dis)
non-inverted and inverted
laser modulation output
current at disable
V
ENABLE
< 0.8 V - - 200 µA
V
o(LA)min
minimum output voltage at
pin LA
TZA3011A; V
CCO
= 3.3 V 1.6 - - V
TZA3011B; V
CCO
= 3.3 V 1.2 - - V
TZA3011B; V
CCO
= 5 V 1.6 - - V
Enable function: pin ENABLE
V
IL
LOW-level input voltage bias and modulation currents
disabled
- - 0.8 V
V
IH
HIGH-level input voltage bias and modulation currents enabled 2.0 - - V
R
pu(int)
internal pull-up resistance 16 20 30 kΩ
Alarm reset: pin ALRESET
V
IL
LOW-level input voltage no reset - - 0.8 V
V
IH
HIGH-level input voltage reset 2.0 - - V
R
pd(int)
internal pull-down
resistance
710 15kΩ
Table 7: Characteristics
…continued
T
amb
=
−
40
°
C to +85
°
C; R
th(j-a)
= 35 K/W; P
tot
= 400 mW; V
CCA
= 3.14 V to 3.47 V; V
CCD
= 3.14 V to 3.47 V; V
CCO
= 3.14 V
to 3.47 V; R
AVR
= 7.5 k
Ω
;R
ER
=62k
Ω
;R
MODIN
= 6.2 k
Ω
;R
BIASIN
= 6.8 k
Ω
;R
PWA
=10k
Ω
;R
RREF
=10k
Ω
;R
MAXMON
=13k
Ω
;
R
MAXOP
=20k
Ω
; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 15 of 30
Philips Semiconductors
TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
[1] The total power dissipation P
tot
is calculated with V
BIAS
=V
CCO
= 3.3 V and I
BIAS
= 20 mA. In the application V
BIAS
will be V
CCO
minus
the laser diode voltage which results in a lower total power dissipation.
[2] The specification of the offset voltage is guaranteed by design.
[3] Any (AVR, ER) settings need to respect I
MON
>50µA and I
MON
< 2500 µA. Therefore, for large ER settings, minimum/maximum AVR
cannot be reached.
[4] The relation between the sink current I
o(LA)
and the modulation current I
mod
is: where Z
L(LA)
is the
external load on pin LA. The voltage on pin MODIN programmes the modulation current I
mod
. This current is divided between Z
L(LA)
and
the 100 Ω internal resistor connected to pins LA. When the modulation current is programmed to 100 mA, a typical Z
L(LA)
of 25 Ω will
result in an I
o(LA)
current of 80 mA, while 20 mA flows via the internal resistor. This corresponds to a voltage swing of 2 V on the real
application load.
[5] V
VTEMP
= 1.31 + TC
VTEMP
× T
j
and T
j
=T
amb
+P
tot
× R
th(j-a)
.
Alarm operating current: pins MAXOP and ALOP
V
ref(MAXOP)
reference voltage on
pin MAXOP
I
MAXOP
=10µA to 200 µA 1.15 1.2 1.25 V
N
MAXOP
ratio of I
oper(alarm)
and
I
MAXOP
I
oper(alarm)
= 7.5 mA to 150 mA
V
CCO
= 3.3 V 700 800 900
V
CCO
= 5.0 V 750 850 950
V
D(ALOP)L
drain voltage at active
alarm
I
ALOP
= 500 µA 0 - 0.4 V
Alarm monitor current: pins MAXMON and ALMON
V
ref(MAXMON)
reference voltage on
pin MAXMON
I
MAXMON
=10µA to 200 µA 1.15 1.2 1.25 V
N
MAXMON
ratio of I
MON(alarm)
and
I
MAXMON
I
MON(alarm)
= 150 µA to 3000 µA101520
V
D(ALMON)L
drain voltage at active
alarm
I
ALMON
= 500 µA 0 - 0.4 V
Reference block: pins RREF and VTEMP
V
RREF
reference voltage R
RREF
=10kΩ (1 %);
C
RREF
< 100 pF
1.15 1.20 1.25 V
V
VTEMP
temperature dependent
voltage
T
j
=25°C; C
VTEMP
<2nF
[5]
1.15 1.20 1.25 V
TC
VTEMP
temperature coefficient of
V
VTEMP
T
j
= −25 °C to +125 °C
[5]
- −2.2 - mV/K
I
source(VTEMP)
source current of
pin VTEMP
-- −1mA
I
sink(VTEMP)
sink current of pin VTEMP 1 - - mA
Table 7: Characteristics
…continued
T
amb
=
−
40
°
C to +85
°
C; R
th(j-a)
= 35 K/W; P
tot
= 400 mW; V
CCA
= 3.14 V to 3.47 V; V
CCD
= 3.14 V to 3.47 V; V
CCO
= 3.14 V
to 3.47 V; R
AVR
= 7.5 k
Ω
;R
ER
=62k
Ω
;R
MODIN
= 6.2 k
Ω
;R
BIASIN
= 6.8 k
Ω
;R
PWA
=10k
Ω
;R
RREF
=10k
Ω
;R
MAXMON
=13k
Ω
;
R
MAXOP
=20k
Ω
; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
oLA()
I
mod
100
100 Z
LLA()
+
-------------------------------
×=
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TZA3011AVH/C2,551

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Manufacturer:
NXP Semiconductors
Description:
IC LASER DRIVER 3.2GBPS 32-HBCC
Lifecycle:
New from this manufacturer.
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