9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 7 of 30
Philips Semiconductors
TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
ENABLE 16 829.8 1123.7 enable input for modulation and bias current
GNDDFT 17 665.6 1124.0 ground
ALOP 18 504.9 1124 alarm output on operating current (open-drain)
ALMON 19 267.6 1124.3 alarm output on monitor diode current
(open-drain)
i.c. 20
[2]
221.5 344.4 internally connected
MAXOP 21 98.5 1124.3 threshold level input for alarm on operating current
i.c. 22
[2]
48.6 368.4 internally connected
VTEMP 23 +294.0 1124.2 temperature dependent voltage output source
MAXMON 24 +466.9 1124.2 threshold level input for alarm on monitor diode
current
RREF 25 +694.9 1124.0 reference current input; must be connected to
ground with an accurate (1 %) 10 k resistor
GNDRF 26 +860.3 1124.0 ground
PWA 27 +1098.9 979.4 pulse width adjustment input
GNDO 28 +1099.0 829.7 ground
LAQ 29 +1099.0 691.2 inverted laser modulation output (RF output);
output for dummy load
LAQ 30 +1099.0 611.2 inverted laser modulation output (RF output);
output for dummy load
LAQ 31 +1099.0 506.4 inverted laser modulation output (RF output);
output for dummy load
LAQ 32 +1099.0 426.4 inverted laser modulation output (RF output);
output for dummy load
GNDO 33 +1099.8 247.0 ground
i.c. 34
[2]
+839.0 194.4 internally connected
GNDO 35 +1099.8 142.0 ground
GNDO 36 +1099.8 36.8 ground
LA 37 1099.1 105.4 non-inverted laser modulation output (RF output);
output for laser
i.c. 38
[2]
839.0 179.6 internally connected
LA 39 1099.1 185.4 non-inverted laser modulation output (RF output);
output for laser
LA 40 1099.1 290.5 non-inverted laser modulation output (RF output);
output for laser
LA 41 1099.1 370.5 non-inverted laser modulation output (RF output);
output for laser
GNDO 42 1099.1 670.8 ground
BIAS 43 1099.0 804.8 current source output for the laser bias current
V
CCO
44 1099.0 944.4 supply voltage for the output stage and the laser
diode
V
CCO
45 1099.0 1024.4 supply voltage for the output stage and the laser
diode
ACDC 46
[3]
942.5 1124.3 AC or DC coupled laser
Table 3: Bonding pad description TZA3011UH
[1]
…continued
Symbol Pad X Y Description
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 8 of 30
Philips Semiconductors
TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
[1] All GND connections should be used.
All ground pads must be connected to ground.
Recommended order of bonding: all GND first, then V
CCA
,V
CCD
and V
CCO
supplies and finally the input and
output pins.
All coordinates are referenced, in µm, to the center of the die.
[2] Pad is internally connected, do not use.
[3] ACDC pad must be left unconnected for AC-coupling applications. For DC-coupling applications, connect
this pad to ground.
7. Functional description
7.1 Data and clock input
The TZA3011 operates with differential Positive Emitter Coupled Logic (PECL), Low
Voltage Positive Emitter Coupled Logic (LVPECL) and Current-Mode Logic (CML) data
and clock inputs with a voltage swing from 100 mV to 1 V (p-p). It is assumed that both the
data and clock inputs carry a complementary signal with the specified peak-to-peak value
(true differential excitation).
GNDESD 47 765.0 1123.8 ground
MON 48 602.1 1123.7 input for the monitor photodiode (RF input)
BIASIN 49 431.7 1123.8 input for the bias current setting
BIASOUT 50 267.6 1123.8 output of the control block for the bias current
GNDCCB 51 100.8 1123.8 ground
MODIN 52 82.7 +1123.8 input for the modulation current setting
GNDCCB 53 241.1 +1123.8 ground
i.c. 54
[2]
274.4 +954.4 internally connected
MODOUT 55 487.2 +1123.8 output of the control block for the modulation
current
ER 56 645.6 +1123.8 input for the optical extinction ratio setting
AVR 57 802.8 +1123.8 input for the optical average power level setting
Table 4: Physical characteristics of TZA3011UH
Parameter Value
Glass passivation 0.3 µm PSG (Phospho Silicate Glass) on top of 0.8 µm of silicon nitride
Bonding pad dimension minimum dimension of exposed metallization is 80 µm × 80 µm (pad
size = 90 µm × 90 µm)
Metallization 2.8 µm AlCu
Thickness 380 µm nominal
Size 2.560 mm × 2.510 mm (6.43 mm
2
)
Backing silicon; electrically connected to GND potential through substrate
contacts
Attach temperature < 440 °C; recommended die attachment is by gluing
Attach time < 15 s
Table 3: Bonding pad description TZA3011UH
[1]
…continued
Symbol Pad X Y Description
9397 750 14437 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 20 January 2005 9 of 30
Philips Semiconductors
TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate laser drivers
The circuit generates an internal common mode voltage for AC-coupled data and clock
inputs and for single-ended applications.
If V
DIN
>V
DINQ
, the modulation current is sunk by the LA pins and corresponds to an
optical ‘one’ level of the laser.
7.2 Retiming
The retiming function synchronizes the data with the clock to improve the jitter
performance. The data latch switches on the rising edge of the clock input. The retiming
function is disabled when both clock inputs are below 0.3 V.
At start-up the initial polarity of the laser is unknown before the first rising edge of the
clock input.
7.3 Pulse width adjustment
The on-duration of the laser current can be adjusted from 100 ps to +100 ps. The
adjustment time is set by resistor R
PWA
. The maximum allowable capacitive load on pin
PWA is 100 pF. Pulse width adjustment is disabled when pin PWA is short-circuited to
ground.
7.4 Modulator output stage
The output stage is a high-speed bipolar differential pair with typical rise and fall times of
80 ps and with a modulation current source of up to 100 mA when the LA pins are
connected to V
CCO
.
The modulation current switches between the LA and LAQ outputs. For a good RF
performance the inactive branch carries a small amount of the modulation current.
The LA output is optimized for the laser allowing a 2 V dynamic range and a 1.2 V
minimum voltage. The LAQ output is optimized for the dummy load.
The output stage of the TZA3011A is optimized for AC-coupled lasers and the output
stage of the TZA3011B is optimized for DC-coupled lasers.
The BIAS output is optimized for low voltage requirements (0.4 V minimum for a 3.3 V
laser supply; 0.8 V minimum for a 5 V laser supply).
7.5 Dual-loop control
The TZA3011 incorporates a dual-loop control for a constant, accurate and
temperature-independent control of the optical average power level and the extinction
ratio. The dual-loop guarantees constant optical ‘one’ and ‘zero’ levels which are
independent of the laser temperature and the laser age.
The dual-loop operates by monitoring the current of the monitor photodiode which is
directly proportional to the laser emission. The ‘one’ and ‘zero’ current levels of the
monitor diode are captured by the detector of the dual-loop control. The pin MON for the
monitor photodiode current is an RF input.
The average monitor current is programmable over a wide current range from 150 µA
to 1300 µA for both the dual-loop control and the average loop control. The extinction ratio
is programmable from 5 to 15.

TZA3011AVH/C2,551

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
IC LASER DRIVER 3.2GBPS 32-HBCC
Lifecycle:
New from this manufacturer.
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