MRF6S19140HSR3 Datasheet MRF6S19140HSR3, MRF6S19140HSR5, MRF6S19140HR3 | P1-P3

MRF6S19140HR3 MRF6S19140HSR3

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement - Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from

1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications. To be used in Class AB for PCN-PCS/cellular radio and WLL

applications.

• Typical 2-Carrier N - CDMA Performance: V

= 28 Volts, I

= 1150 mA,

out

= 29 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync,

Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz,

PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 16 dB

Drain Efficiency — 27.5%

IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Channel Bandwidth

ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large- Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

Operation

• Integrated ESD Protection

• Optimized for Doherty Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain- Source Voltage V

DSS

-0.5, +68 Vdc

Gate- Source Voltage V

-0.5, +12 Vdc

Storage Temperature Range T

stg

- 65 to +150 °C

Case Operating Temperature T

150 °C

Operating Junction Temperature

(1,2)

225 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value

(2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 140 W CW

Case Temperature 77°C, 29 W CW

0.33

0.38

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MRF6S19140H

Rev. 5, 5/2007

Freescale Semiconductor

Technical Data

MRF6S19140HR3

MRF6S19140HSR3

1930 - 1990 MHz, 29 W AVG., 28 V

2 x N-CDMA

LATERAL N -CHANNEL

RF POWER MOSFETs

CASE 465C-02, STYLE 1

NI- 880S

MRF6S19140HSR3

CASE 465B-03, STYLE 1

NI- 880

MRF6S19140HR3

RF Device Data

Freescale Semiconductor

MRF6S19140HR3 MRF6S19140HSR3

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22- A114) 2 (Minimum)

Machine Model (per EIA/JESD22- A115) A (Minimum)

Charge Device Model (per JESD22- C101) IV (Minimum)

Table 4. Electrical Characteristics (T

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

= 68 Vdc, V

= 0 Vdc)

DSS

— — 10 µAdc

Zero Gate Voltage Drain Leakage Current

= 28 Vdc, V

= 0 Vdc)

DSS

— — 1 µAdc

Gate- Source Leakage Current

= 5 Vdc, V

= 0 Vdc)

GSS

— — 1 µAdc

On Characteristics

Gate Threshold Voltage

= 10 Vdc, I

= 300 µAdc)

GS(th)

1 2 3 Vdc

Gate Quiescent Voltage

= 28 Vdc, I

= 1150 mAdc, Measured in Functional Test)

GS(Q)

2 2.8 4 Vdc

Drain- Source On- Voltage

= 10 Vdc, I

= 3 Adc)

DS(on)

0.1 0.21 0.3 Vdc

Dynamic Characteristics

(1)

Reverse Transfer Capacitance

= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

rss

— 2 — pF

Functional Tests (In Freescale Test Fixture, 50 ohm system) V

= 28 Vdc, I

= 1150 mA, P

out

= 29 W Avg., f1 = 1930 MHz,

f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2- carrier N- CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in

30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @

0.01% Probability on CCDF.

Power Gain G

15 16 18 dB

Drain Efficiency η

26 27.5 — %

Intermodulation Distortion IM3 — -37 -35 dBc

Adjacent Channel Power Ratio ACPR — -51 -48 dBc

Input Return Loss IRL — -15 -9 dB

1. Part is internally matched both on input and output.

MRF6S19140HR3 MRF6S19140HSR3

RF Device Data

Freescale Semiconductor

Figure 1. MRF6S19140HR3(HSR3) Test Circuit Schematic

Z7 0.115″ x 0.569″ Microstrip

Z8 0.191″ x 0.289″ Microstrip

Z9 0.681″ x 0.081″ Microstrip

Z10 1.140″ x 0.081″ Microstrip

PCB Arlon GX0300- 55-22, 0.030″, ε

= 2.5

Z1 0.864″ x 0.082″ Microstrip

Z2 1.373″ x 0.082″ Microstrip

Z3 0.282″ x 0.900″ Microstrip

Z4 0.103″ x 0.900″ Microstrip

Z5 0.094″ x 1.055″ Microstrip

Z6 0.399″ x 1.055″ Microstrip

INPUT

OUTPUT

DUT

BIAS

C13

Z2 Z3

BIAS

C14

Z5 Z6 Z7

C5 C9 C11

C15

SUPPLY

Z8 Z9

Z10

SUPPLY

C6 C10 C12

Table 5. MRF6S19140HR3(HSR3) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

B1, B2 Beads, Surface Mount 2743019447 Fair- Rite

C1, C2 39 pF Chip Capacitors ATC100B390JT500XT ATC

C3, C4, C5, C6 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC

C7, C8, C9, C10, C11, C12 10 µF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata

C13, C14 47 µF, 50 V Electrolytic Capacitors EMVY500ADA470MF80G Nippon

C15 470 µF, 63 V Electrolytic Capacitor ESMG630ELL471MK205 United Chemi- Con

R1, R2 560 kΩ, 1/4 W Chip Resistors CRCW12065600FKTA Vishay

R3, R4 1.0 kΩ, 1/4 W Chip Resistors CRCW12061001FKTA Vishay

R5, R6 12 Ω, 1/4 W Chip Resistors CRCW120612R0FKTA Vishay

P1-P3 P4-P6 P7-P9 P10-P11

MRF6S19140HSR3

Mfr. #:

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Manufacturer:

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Description:

RF MOSFET Transistors HV6 28V29W LDMOS NI880HS

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MRF6S19140HSR3

MRF6S19140HSR3

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